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US3G

Description
High Efficiency Recovery rectifiers
File Size112KB,2 Pages
ManufacturerWINNERJOIN
Websitehttp://www.wej.cn/
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US3G Overview

High Efficiency Recovery rectifiers

RoHS
US3A-US3M
High Efficiency Recovery rectifiers
Major Ratings and Characteristics
I
F(AV)
3.0A
V
RRM
50 V to 1000 V
I
FSM
100 A
t
rr
50nS,75ns
V
F
1.0V,1.3V,1.7V
T
j
max.
150 °C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
High temperatrue soldering:
260℃/10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Case:
JEDEC DO-214ABolded plastic
body over passivated chip
Terminals:
Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity:
Laser band denotes cathode end
Mechanical Date
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Symbol
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at Rated DC blocking voltage
T
A
= 25
T
A
= 100℃
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
T
J
, T
STG
US3A
50
35
50
US3B
100
70
100
US3D
200
140
200
US3G
400
280
400
3
100
US3J
600
420
600
US3K
800
560
800
US3M
1000
700
1000
UNIT
V
V
V
A
A
1.0
1.3
10.0
50
50
15
85
–55 to +150
1.7
V
μA
Maximum reverse recovery time
at I
F
= 0.5 A , I
R
= 1.0 A , I
rr
= 0.25 A
Typical junction capacitance at 4.0 V ,1MHz
Thermal resistance from junction to lead
Operating junction and storage temperature range
75
nS
pF
℃/
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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