ECG001F-G
InGaP HBT Gain Block
Applications
•
•
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•
•
•
Wireless Infrastructure
CATV / SATV / MoCA
Point to Point
Defense & Aerospace
Test & Measurement Equipment
General Purpose Wireless
01
G0
F-G
EC
6 Pin SOT-363 Package
Product Features
•
•
•
•
•
•
•
DC – 6 GHz
22 dB Gain at 1 GHz
+12.5 dBm P1dB at1 GHz
+25 dBm OIP3 at 1 GHz
3.4 dB Noise Figure
Internally Matched to 50 Ω
Lead-free / green / RoHS-Compliant SOT-363 Package
Functional Block Diagram
General Description
The ECG001F-G is a general-purpose buffer amplifier
that offers high dynamic range in a low-cost surface-
mount package. At 1000 MHz, the ECG001F-G typically
provides 22 dB of gain, +25 dBm Output IP3, and
+12.5 dBm P1dB.
The ECG001F-G consists of a Darlington-pair amplifier
using the high reliability InGaP / GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The device is ideal for wireless applications and is
available in a low-cost, surface-mountable lead-
free / green / RoHS-compliant SOT-363 package.
All
devices are 100% RF and DC tested.
This broadband MMIC amplifier can be directly applied
to various current and next generation wireless
technologies. In addition, the ECG001F-G will satisfy
general amplification requirements in the DC to 6 GHz
frequency range such as CATV and mobile wireless.
Pin Configuration
Pin No.
3
6
1, 2, 4, 5
Label
RF IN
RF OUT
GND
Ordering Information
Part No.
ECG001F-G
Description
InGaP / GaAs HBT Gain Block
Standard T/R size = 3000 pieces on a 7” reel
Datasheet: Rev. A 12-05-14
© 2014 TriQuint
-
1 of 6
-
Disclaimer: Subject to change without notice
www.triquint.com
ECG001F-G
InGaP HBT Gain Block
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50Ω, T=25 °C
Device Current (I
CC
)
Recommended Operating Conditions
Parameter
T
CASE
Tj for >10
6
hours MTTF
Rating
−55 to 150 °C
+12 dBm
150 mA
Min
−40
Typ
Max Units
+85
+160
°C
°C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted:
V
SUPPLY
= +5
V, T
CASE
= +25 °C, R
BIAS
= 51 Ω, 50 Ω system
Parameter
Operational Frequency Range
Gain
Output P1dB
Output IP3
(1)
Gain
Input Return Loss
Output Return Loss
Output P1dB
Noise Figure
Device Voltage
Device Current
Thermal Resistance, R
TH
Conditions
Freq.=1000 MHz
OIP3
Pout= −1 dBm / tone, Δf= 1 MHz
Min
DC
Typ
22.2
+12.5
+25
20.7
35
18
+12.5
3.4
+3.4
30
270
Max
6000
Units
MHz
dB
dBm
dBm
dB
dB
dB
dBm
dB
V
mA
°C / W
19.2
Freq.=2000 MHz
21.8
+3.0
+3.8
Typical RF Performance
(1)
Test conditions unless otherwise noted:
V
SUPPLY
= +5 V, Icc = 30 mA (typ.), R
BIAS
= 51 Ω, Temp. =+25 °C, 50 Ω System
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
100
22.8
48
34
+11.6
+23.6
3.4
500
22.6
46
29
+11.6
+23.5
3.4
900
22.4
42
24
+12.6
+24.8
3.4
Typical
1900
20.9
35
18
+12.6
+26
3.4
2140
20.6
29
17
+12.6
+25.6
3.4
2400
20.2
28
16
+12.8
+25.4
3.4
3500
18.6
22
13
+12.2
+23
5800
15.5
14
8
+11
Units
MHz
dB
dB
dB
dBm
dBm
dB
Notes:
1. Gain and return loss values presented above, and in the plots of the following section, are measured at the device level.
Application specific performance values will differ in accordance with external components selected for the desired frequency
band of operation. P1dB, OIP3 and NF data is measured using the application circuit shown on page 4.
2. Pout= −1 dBm / tone, 1 MHz tone spacing.
Datasheet: Rev. A 12-05-14
© 2014 TriQuint
-
2 of 6
-
Disclaimer: Subject to change without notice
www.triquint.com
ECG001F-G
InGaP HBT Gain Block
Typical RF Performance
Test conditions unless otherwise noted:
V
SUPPLY
= +5 V, Icc = 30 mA (typ.), R
BIAS
= 51 Ω, 50 Ω System
24
Gain vs Frequency
Temp.=+25°C
0
Return Loss vs Frequency
Temp.=+25°C
100
Temp.=+25°C
I
CC
vs. V
DE
22
80
-10
|S11|, |S22| (dB)
Gain (dB)
-20
18
|S11|
|S22|
I
CC
(mA)
6
20
60
40
-30
16
20
14
0
1
2
3
4
5
6
-40
0
1
2
3
4
5
0
3.2
3.3
3.4
3.5
3.6
Frequency (GHz)
Frequency (GHz)
V
DE
(V)
28
+85°C
+25°C
OIP3 vs. Frequency
16
Output P1dB vs. Frequency
5
+85°C
+25°C
−40°C
Noise Figure vs. Frequency
14
4
26
−40°C
P1dB (dBm)
OIP3 (dBm)
24
10
NF (dB)
12
3
2
22
8
1
Temp.=+25°C
20
500
1000
1500
2000
2500
3000
6
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Typical Device S-Parameters
Test conditions unless otherwise noted: V
DEVICE
= +3.4 V, I
CC
= 30 mA, Temp. =+25 °C, calibrated to device leads
Frequency (MHz)
50
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11 (dB)
−33.58
−24.53
−32.76
−28.56
−25.13
−28.01
−28.65
−28.35
−25.99
−22.91
−19.69
−17.30
−15.88
S11 (ang)
15.96
12.09
32.44
153.22
172.50
−117.92
−133.85
−142.02
−171.80
160.22
153.85
152.52
144.43
S21 (dB)
22.85
22.63
22.20
21.54
20.74
20.11
19.33
18.59
17.77
17.05
16.39
15.78
15.21
S21 (ang)
178.01
162.01
144.90
129.42
114.94
103.13
91.28
79.59
68.13
57.38
48.12
39.49
30.49
S12 (dB)
−24.47
−24.14
−23.99
−23.56
−23.12
−22.71
−22.14
−21.68
−20.88
−20.50
−20.03
−19.55
−19.14
S12 (ang)
−1.35
1.89
4.76
7.59
9.11
7.41
7.37
4.16
2.49
2.47
−0.55
−5.36
−6.76
S22 (dB)
−28.60
−22.29
−25.75
−20.80
−17.59
−20.44
−18.13
−16.41
−14.29
−12.47
−11.36
−11.30
−11.31
S22 (ang)
3.58
−35.35
−100.14
−165.24
175.89
169.69
154.41
140.24
124.73
116.41
113.60
114.22
113.24
Device S-parameters are available for download at
www.triquint.com
Datasheet: Rev. A 12-05-14
© 2014 TriQuint
-
3 of 6
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Disclaimer: Subject to change without notice
www.triquint.com
ECG001F-G
InGaP HBT Gain Block
Application Circuit
Vcc
Icc = 30 mA
J4
J3
R4
R4
Bias
Resistor
C4
Bypass
Capacitor
C2
C3
C1
U1
L1
C3
0.018 µF
L1
RF Choke
RF IN
ECG001F
C1
Blocking
Capacitor
C2
Blocking
Capacitor
RF OUT
Bill of Material
(1)
Reference Des.
U1
L1
C1, C2
C3
C4
R4
(2)
Value
n/a
39 nH
56 pF
0.018 μF
n/a
51 Ω
Description
InGaP HBT Gain Block
Wirewound Inductor, 0603
Chip Capacitor, 0603
Chip Capacitor, 0603
Do Not Place
1% Tolerance, 0805
Manuf.
TriQuint
various
various
various
various
Part Number
ECG001F-G
Notes:
1. Component values listed for the application have been selected to achieve optimal broadband performance.
2. The value of R4 is dependent upon the supply voltage and provides bias stability over temperature.
3. The minimum recommended supply voltage is +5 V.
4
Recommended Component Values
(1)
Frequency (MHz)
L1
C1, C2, C3
50
820 nH
.018 uF
500
220 nH
1000 pF
900
68 nH
100 pF
1900
27 nH
68 pF
2200
22 nH
68 pF
2500
18 nH
56 pF
3500
15 nH
39 pF
Notes:
1. The values for the components are dependent upon the intended frequency of operation.
Recommended Bias Resistor Values
V
SUPPLY
(V)
R4 (Ω)
Component Size
5
53.3
0805
6
86.7
0805
8
153
1210
9
187
1210
10
220
2010
12
287
2010
Datasheet: Rev. A 12-05-14
© 2014 TriQuint
-
4 of 6
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Disclaimer: Subject to change without notice
www.triquint.com
ECG001F-G
InGaP HBT Gain Block
Package Marking and Dimensions
Product Marking:
The top surface of the component
will be marked with a two-digit
numeric lot code (shown as “XX”)
followed by a “4” designator.
3 4
D
e1
-A-
5
-D-
.15 C A-B
2X
SYMBOL
A
A1
A2
D
E
E1
L
L1
L2
?
?1
b
c
e
e1
MIN
-
0
MAX
1.10 (0.043)
0.10 (0.004)
0.70 (0.028) 1.00 (0.039)
2.00 (0.079 BASIC
2.10 (0.083) BASIC
1.25 (0.049) BASIC
0.21 (0.008) 0.41 (0.016)
0.42 (0.017) REF
0.15 (0.006) BASIC
0`8
4`8
0.08 (0.003)
8`8
12`8
0.22 (0.009)
PIN 1 ID
e
5
-B-
(6X) b
.10
C A-B D
.30 C
E/2
E1/2
3 4 E1
2X
.15 C D
XX4
E
0.15 (0.006) 0.30 (0.012)
BOTH SIDES
0.65 (0.026) BASIC
1.30 (0.051) BASIC
Notes:
1. Dimensions are in millimeters
(Inches)
2. Dimensions and tolerances per
ASME Y14.5M-1194. Package
conforms to JEDEC MO-203,
Issue B.
TOP VIEW
8X 01
-H-
c
L2
GAUGE PLANE
A2
A
6X
.10 C
?
SEATING -C-
PLANE
A1
SEATING PLANE
SIDE VIEW
-C-
PCB Mounting Pattern
0.762 [0.030]
0.381 [0.015]
16X Ø.254 (.010) PLATED THRU VIA HOLES
2X 0.762 [0.030]
2X 1.207 [0.048]
2.515 [0.099]
1.524 [0.060]
2X 0.914 [0.036]
2X 0.406 [0.016]
2X 0.387 [0.015]
2X 0.203 [0.01]
2X 0.773 [0.030]
2X 0.939 [0.037]
1.301 [0.051]
6
2X 1.270 [0.050]
6.329 [0.249]
4X 0.889 [0.035]
4X 0.889 [0.035]
4.064 [0.160]
Notes:
1. All dimensions are in millimeters (inches). Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation.
4. Do not remove or minimize via hole structure in the PCB. Thermal and RF grounding is critical.
5. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25 mm (0.10”).
6. The RF I/O trace transition shown is to a 30 mil wide line. Modify transition as required to interface with other line widths.
Datasheet: Rev. A 12-05-14
© 2014 TriQuint
-
5 of 6
-
Disclaimer: Subject to change without notice
www.triquint.com
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