SSG4512CE
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R
DS(ON)
31 mΩ
Ω
P-Ch: -5.2 A, -30 V, R
DS(ON)
52 mΩ
Ω
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R
DS(on)
and to ensure minimal power loss and heat dissipation.
SOP-8
B
FEATURES
Low R
DS(on)
provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast Switch Speed.
High performance trench technology.
A
C
L
D
M
N
J
H
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
K
F
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
E
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
REF.
A
B
C
D
E
F
G
REF.
H
J
K
L
M
N
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
Leader Size
13 inch
S1
D1
D1
G1
S2
D2
G2
D2
MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
2
1
1
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
S
P
D
T
J
, T
STG
Ratings
N-Ch
P-Ch
Unit
V
V
A
A
A
A
W
W
°C
30
±20
6.9
5.4
20
1.3
2.1
1.3
-55~150
-30
±20
-5.2
-6.8
-20
-1.3
2.1
1.3
Continuous Source Current (Diode Conduction)
Total Power Dissipation
1
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Maximum Junction-ambient
Maximum Junction-Case
1
1
t<=5 sec
t<=5 sec
R
θJA
R
θJC
60
40
°C
/ W
°C
/ W
Notes：
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A
Page 1 of 7
SSG4512CE
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R
DS(ON)
31 mΩ
Ω
P-Ch: -5.2 A, -30 V, R
DS(ON)
52 mΩ
Ω
N-CHANNEL ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
On-State Drain Current
1
Typ.
Max.
Unit
Test Conditions
V
GS(th)
I
GSS
I
DSS
I
D(ON)
1
1
-
-
20
-
-
-
-
-
-
-
25
-
±100
1
-
31
V
nA
µA
A
m
V
DS
=V
GS
, I
D
=250µA
V
GS
= 8V, V
DS
=0
V
DS
=24V, V
GS
=0
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=6.9A
V
GS
=4.5V, I
D
=6A
Static Drain-Source On-Resistance
Forward Transconductance
1
R
DS(ON)
-
g
fs
-
40
-
S
V
DS
=15V, I
D
=6.9A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
4.0
1.1
1.4
8
5
23
3
-
-
-
-
nS
-
-
V
DD
=15V
V
GS
=10V
I
D
=1A
R
GEN
=6
nC
I
D
=6.9A
V
DS
=15V
V
GS
=10V
Notes:
1. Pulse test: PW
≦
300us duty cycle
≦
2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A
Page 2 of 7
SSG4512CE
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R
DS(ON)
31 mΩ
Ω
P-Ch: -5.2 A, -30 V, R
DS(ON)
52 mΩ
Ω
P-CHANNEL ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
On-State Drain Current
1
Typ.
Max.
Unit
Test Conditions
V
GS(th)
I
GSS
I
DSS
I
D(ON)
1
-1
-
-
-20
-
-
-
-
-
-
-
10
-
±100
-1
-
52
V
nA
µA
A
m
V
DS
=V
GS
, I
D
= -250µA
V
GS
= -8V, V
DS
=0
V
DS
= -24V, V
GS
=0
V
DS
= -5V, V
GS
= -10V
V
GS
= -10V, I
D
= -5.2A
V
GS
= -4.5V, I
D
= -4.2A
Static Drain-Source On-Resistance
Forward Transconductance
1
R
DS(ON)
-
g
fs
-
80
-
S
V
DS
= -15V, I
D
= -5.2A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
10
2.2
1.7
10
2.8
53.6
46
-
-
-
-
nS
-
-
V
DD
= -15V
V
GS
= -10V
I
D
= -1A
R
GEN
=6
nC
I
D
= -5.2A
V
DS
= -15V
V
GS
= -10V
Notes:
1. Pulse test: PW
≦
300us duty cycle
≦
2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A
Page 3 of 7
SSG4512CE
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R
DS(ON)
31 mΩ
Ω
P-Ch: -5.2 A, -30 V, R
DS(ON)
52 mΩ
Ω
CHARACTERISTIC CURVE (N-Ch)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A
Page 4 of 7
SSG4512CE
Elektronische Bauelemente
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R
DS(ON)
31 mΩ
Ω
P-Ch: -5.2 A, -30 V, R
DS(ON)
52 mΩ
Ω
CHARACTERISTIC CURVE (N-Ch)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A
Page 5 of 7
Analogue and Mixed Signal
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