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BD944F

Description
Bipolar Transistors;PNP;-5A;-22V;TO-220Fa
CategoryDiscrete semiconductor   
File Size109KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BD944F Overview

Bipolar Transistors;PNP;-5A;-22V;TO-220Fa

BD944F Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BD944F/946F/948F
DESCRIPTION
·DC
Current Gain-
: h
FE
= 85(Min)@ I
C
= -500mA
·Complement
to Type BD943F/945F/947F
APPLICATIONS
·Designed
for use in audio output stages and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD944F
V
CBO
Collector-Base Voltage
BD946F
BD948F
BD944F
V
CEO
Collector-Emitter Voltage
BD946F
BD948F
V
EBO
I
C
I
CM
I
B
B
VALUE
-22
-32
-45
-22
-32
-45
-5
-5
-8
-1
22
150
-65~150
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
W
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
7.93
UNIT
℃/W
isc Website:www.iscsemi.cn
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