RJH60F5DPQ-A0_15 datasheet, PDF

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RJH60F5DPQ-A0_15: Description600 V - 40 A - IGBT High Speed Power Switching; File Size83KB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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RJH60F5DPQ-A0_15 Overview

600 V - 40 A - IGBT High Speed Power Switching

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Preliminary

Datasheet

RJH60F5DPQ-A0

600 V - 40 A - IGBT

High Speed Power Switching

Features



Low collector to emitter saturation voltage

CE(sat)

= 1.37 V typ. (I

= 40 A, V

= 15 V, Ta = 25°C)



Built in fast recovery diode in one package



Trench gate and thin wafer technology



High speed switching

= 85 ns typ. (at I

= 30 A, V

= 400 V, V

= 15 V, Rg = 5

,

Ta = 25°C, inductive load)

R07DS0326EJ0200

Rev.2.00

Jul 22, 2011

Outline

RENESAS Package code: PRSS0003ZH-A

(Package name: TO-247A)

1. Gate

2. Collector

3. Emitter

4. Collector

1 2

Absolute Maximum Ratings

(Tc = 25°C)

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Tc = 25 °C

Tc = 100 °C

Collector peak current

Collector to emitter diode forward peak current

Collector dissipation

Junction to case thermal impedance (IGBT)

Junction to case thermal impedance (Diode)

Junction temperature

Storage temperature

Notes: 1. Pulse width limited by safe operating area.

2. PW



s,

duty cycle



Symbol

CES

GES

ic(peak)

Note1

(peak)

Note2

j-c

j-cd

Tstg

Ratings

600

±30

160

100

260.4

0.48

2.0

150

–55 to +150

Unit

°C/W

°C

R07DS0326EJ0200 Rev.2.00

Jul 22, 2011

Page 1 of 7

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