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IRF7521D1

Description
Power MOSFET and Schottky Diode
File Size710KB,8 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet View All

IRF7521D1 Overview

Power MOSFET and Schottky Diode

IRF7521D1
Description
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the Micro8
TM
an ideal device for applications where printed circuit board space is at a premium.
TM
The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA cards.
TM
MOSFET / Schottky Diode
q
q
q
q
q
Power MOSFET
and Schottky Diode
N-Channel HEXFET
Low V
F
Schottky Rectifier
Generation 5 Technology
Micro8
TM
Footprint
A
A
S
G
1
8
K
K
D
D
V
DSS
= 20V
R
DS(on)
= 0.135Ω
Schottky Vf = 0.39V
Micro8
TM
2
7
3
6
4
5
T op V ie w
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Œ
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt

Junction and Storage Temperature Range
Maximum
2.4
1.9
19
1.3
0.8
10
± 12
5.0
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Junction-to-Ambient

Maximum
100
Units
°C/W
Notes:
Œ
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)

I
SD
1.7A, di/dt
66A/µs, V
DD
V
(BR)DSS
, T
J
150°C
Ž
Pulse width
300µs; duty cycle
2%

Surface mounted on FR-4 board, t
10sec.
2014-8-8
1
www.kersemi.com
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