EEWORLDEEWORLDEEWORLD

Part Number

Search

SBL20A100F_15

Description
Low VF Planar MOS Barrier Schottky Rectifier
File Size145KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet View All

SBL20A100F_15 Overview

Low VF Planar MOS Barrier Schottky Rectifier

SBL20A100F
Elektronische Bauelemente
Voltage 100V 20.0 Amp
Low VF Planar MOS Barrier Schottky Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen free
ITO-220
FEATURES
Planar
MOS Schottky technology
Low forward voltage drop
Low reverse current
High current capability
High reliability
High surge current capability
Epitaxial construction
B
N
D
E
M
A
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.98 g (Approximate)
H
J
K
L
C
G
F
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
2.70
4.00
0.90
1.50
0.50
0.90
2.34
2.74
2.40
3.00
φ
3.0
φ
3.4
L
REF.
A
B
C
D
E
F
G
1
3
2
Millimeter
Min.
Max.
14.60
15.70
9.50
10.50
12.60
14.00
4.30
4.70
2.30
3.2
2.30
2.90
0.30
0.75
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25° ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
C
For capacitive load, de-rate current by 20%.)
Parameter
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current
Voltage Rate of Chance (Rated V
R
)
Typical Thermal Resistance
Operating and Storage Temperature Range
(Per Leg)
(Per Device)
Symbol
V
RRM
V
RSM
V
DC
I
F
I
FSM
dv/dt
R
θ
JC
T
J
,T
STG
Rating
100
100
100
10
20
120
10000
4
-40~150
Unit
V
V
V
A
A
V /
µs
° /W
C
°
C
Peak Forward Surge Current, 8.3 ms single half sine-wave
ELECTRICAL CHARACTERISTICS
Parameter
Maximum Instantaneous Forward
Voltage
Maximum DC Reverse Current
2
at Rated DC Blocking Voltage
Typical Junction Capacitance
1
Symbol
Typ.
0.57
0.69
0.79
0.7
-
-
160
Max.
0.64
0.74
0.84
-
0.2
10
-
Unit
V
Test Condition
I
F
= 3A, T
J
= 25°
C
I
F
= 5A, T
J
= 25°
C
I
F
= 10 A, T
J
= 25°
C
I
F
= 10 A, T
J
= 125°
C
T
J
=25°
C
T
J
=100°
C
V
F
I
R
C
J
mA
pF
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Pulse Test:Pulse Width = 300
µs,
Duty Cycle
2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-May-2013 Rev. A
Page 1 of 2

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1574  2827  210  1583  866  32  57  5  18  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号