IRFB4019PBF
D
TO-220AB
Features
•
Key Parameters Optimized for Class-D Audio
Amplifier Applications
•
Low R
DSON
for Improved Efficiency
•
Low Q
G
and Q
SW
for Better THD and Improved
Efficiency
•
Low Q
RR
for Better THD and Lower EMI
•
175°C Operating Junction Temperature for
Ruggedness
•
Can Deliver up to 200W per Channel into 8Ω Load in
Half-Bridge Configuration Amplifier
G
S
Key Parameters
V
DS
R
DS(ON)
typ. @ 10V
Q
g
typ.
Q
sw
typ.
R
G(int)
typ.
T
J
max
150
80
13
5.1
2.4
175
V
m:
nC
nC
Ω
°C
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
Power Dissipation
f
Power Dissipation
f
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10lbxin (1.1Nxm)
Max.
150
±20
17
12
51
80
40
0.5
-55 to + 175
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
Typ.
–––
0.50
–––
Max.
1.88
–––
62
°C/W
Units
2014-8-13
1
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IRFB4019PBF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
R
G(int)
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
L
D
L
S
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.19
80
–––
-13
–––
–––
–––
–––
–––
13
3.3
0.95
4.1
4.7
5.1
2.4
7.0
13
12
7.8
800
74
19
99
4.5
7.5
–––
–––
95
4.9
–––
20
250
100
-100
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
pF
V
GS
= 0V
V
DS
= 50V
ns
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 10A
V
mΩ
V
mV/°C
µA
nA
S
V/°C Reference to 25°C, I
D
= 1mA
e
V
DS
= V
GS
, I
D
= 50µA
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 10A
V
DS
= 75V
nC
V
GS
= 10V
I
D
= 10A
See Fig. 6 and 19
V
DD
= 75V, V
GS
= 10V
I
D
= 10A
R
G
= 2.4Ω
Ãe
ƒ = 1.0MHz,
Between lead,
6mm (0.25in.)
from package
See Fig.5
V
GS
= 0V, V
DS
= 0V to 120V
D
G
S
and center of die contact
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Ãg
d
Typ.
Max.
Units
mJ
A
mJ
–––
73
Repetitive Avalanche Energy
g
Min.
–––
–––
–––
–––
–––
–––
–––
–––
64
160
See Fig. 14, 15, 17a, 17b
Diode Characteristics
Parameter
I
S
@ T
C
= 25°C Continuous Source Current
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Typ. Max. Units
17
A
51
1.3
96
240
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
T
J
= 25°C, I
F
= 10A
di/dt = 100A/µs
Ã
e
e
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2
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IRFB4019PBF
100
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
5.0V
1
0.1
5.0V
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
≤
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100.0
Fig 2.
Typical Output Characteristics
3.0
VDS = 25V
ID, Drain-to-Source Current
(Α)
RDS(on) , Drain-to-Source On Resistance
ID = 10A
2.5
≤
60µs PULSE WIDTH
10.0
VGS = 10V
(Normalized)
TJ = 175°C
2.0
1.0
1.5
TJ = 25°C
1.0
0.1
2
4
6
8
10
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
ID= 10A
VDS = 120V
VDS= 75V
VDS= 30V
16
C, Capacitance (pF)
1000
Ciss
12
100
Coss
8
4
Crss
10
1
10
100
1000
0
0
5
10
15
20
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
2014-8-13
3
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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IRFB4019PBF
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100
100µsec
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
10
TJ = 175°C
1
TJ = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
100
1000
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
20
5.0
Fig 8.
Maximum Safe Operating Area
16
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
4.0
12
ID = 50µA
3.0
8
2.0
4
0
25
50
75
100
125
150
175
1.0
-75
-50 -25
0
25
50
75
100 125 150 175
TJ , Junction Temperature (°C)
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Fig 10.
Threshold Voltage vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
τ
J
0.1
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
3
τ
Ri (°C/W)
τι
(sec)
0.02
0.01
0.01
τ
1
τ
2
τ
3
Ci=
τi/Ri
Ci=
τi/Ri
0.535592 0.000222
0.913763 0.001027
0.432454 0.006058
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-13
4
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IRFB4019PBF
Ω
RDS (on), Drain-to -Source On Resistance ( )
ID = 10A
0.4
EAS, Single Pulse Avalanche Energy (mJ)
0.5
300
250
1.3A
2.3A
BOTTOM
10A
TOP
ID
200
0.3
150
0.2
100
0.1
TJ = 125°C
TJ = 25°C
50
0.0
4
6
8
10
12
14
16
0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 12.
On-Resistance Vs. Gate Voltage
100
Fig 13.
Maximum Avalanche Energy Vs. Drain Current
Duty Cycle = Single Pulse
Avalanche Current (A)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
1
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Typical Avalanche Current Vs.Pulsewidth
80
EAR , Avalanche Energy (mJ)
60
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 10A
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy Vs. Temperature
2014-8-13
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long as neither
Tjmax nor Iav (max) is exceeded
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. B
V
= Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
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