IRFR3411PBF
IRFU3411PBF
D-Pak
IRFR3411
l
l
l
l
l
l
l
I-Pak
IRFU3411
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The
straight lead, I-Pak, version (IRFU series) is for through-
hole mounting applications. Power dissipation levels up
to 1.5 watts are possible in typical surface mount
applications.
D
V
DSS
= 100V
R
DS(on)
= 44mΩ
G
S
I
D
= 32A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
32
23
110
130
0.83
± 20
16
13
7.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.2
50
110
Units
°C/W
2014-8-15
1
WWW.KERSEMI.COM
IRFR/U3411PBF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min. Typ. Max. Units
Conditions
100 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.12 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
36
44
mΩ V
GS
= 10V, I
D
= 16A
2.0
––– 4.0
V
V
DS
= V
GS
, I
D
= 250µA
21
––– –––
S
V
DS
= 50V, I
D
= 16A
––– ––– 25
V
DS
= 100V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
–––
48
71
I
D
= 16A
–––
9.0
14
nC
V
DS
= 80V
–––
14
21
V
GS
= 10V, See Fig. 6 and 13
–––
11 –––
V
DD
= 50V
–––
35 –––
I
D
= 16A
ns
–––
39 –––
R
G
= 5.1Ω
–––
35 –––
V
GS
= 10V, See Fig. 10
Between lead,
4.5
–––
–––
6mm (0.25in.)
nH
G
from package
–––
7.5
–––
and center of die contact
––– 1960 –––
V
GS
= 0V
––– 250 –––
V
DS
= 25V
–––
40 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 700
185 mJ I
AS
= 16A, L = 1.5mH
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
33
––– –––
showing the
A
G
integral reverse
––– ––– 110
S
p-n junction diode.
––– ––– 1.2
V
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
––– 115 170
ns
T
J
= 25°C, I
F
= 16A
––– 505 760
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L =1.5mH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
I
SD
≤ 16A,
di/dt
≤
340A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
2014-8-15
2
WWW.KERSEMI.COM
IRFR/U3411PBF
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
10
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 33A
I
D
, Drain-to-Source Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
T
J
= 25
°
C
100
T
J
= 175
°
C
10
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
2014-8-15
3
WWW.KERSEMI.COM
IRFR/U3411PBF
3000
20
2500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 16A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
16
C, Capacitance (pF)
2000
Ciss
12
1500
8
1000
Coss
500
4
Crss
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
100
T
J
= 175
°
C
10
ID, Drain-to-Source Current (A)
100
10
100µsec
1msec
T
J
= 25
°
C
1
1
T A = 25°C
T J = 175°C
Single Pulse
10msec
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
2014-8-15
4
WWW.KERSEMI.COM
IRFR/U3411PBF
35
V
DS
30
R
D
V
GS
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
25
-
V
DD
I
D
, Drain Current (A)
20
15
10
Fig 10a.
Switching Time Test Circuit
V
DS
90%
5
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
P
DM
t
1
t
2
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-15
5
WWW.KERSEMI.COM
京公网安备 11010802033920号
EEWORLD
