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SS33

Description
3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size62KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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SS33 Overview

3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AB

SS32-SS36
3.0A Surface Mount Schottky Barrier Rectifier
Features
·
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
·
For surface mount applications
·
Low profile package
·
Built-in strain relief, ideal for automated placement
·
Easy pick and place
·
Metal silicon junction,
majority carrier conduction
·
Low power loss, high efficiency
·
High current capability, low forward voltage drop
·
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
·
High temperature soldering:
250°C/10 seconds at terminals
B
SMC
Dim
A
B
C
D
E
G
H
J
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
A
C
D
J
Mechanical Data
·
Case:
JEDEC DO-214AB molded plastic body
·
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
·
Polarity:
Color band denotes cathode end
·
Weight:
0.007 ounce 0.25 gram
H
G
E
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
SYMBOLS
SS32
SS33
SS34
SS35
SS36
UNITS
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L (SEE FIG. 1) (NOTE 2)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
(NOTE 1)
S2
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
20
14
20
S3
30
21
30
S4
40
28
40
3.0
100.0
S5
50
35
50
S6
60
42
60
Volts
Volts
Volts
Amps
Amps
V
F
(NOTE 1)
0.50
0.5
20.0
55.0
17.0
-55 to +125
-55 to +150
0.75
10.0
Volts
mA
°C/W
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25°C
T
A
=100°C
I
R
R
ΘJA
R
ΘJL
T
J
T
STG
Typical thermal resistance
(NOTE 2)
Operating junction temperature range
Storage temperature range
NOTES:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) P.C.B. mounted 0.55 x 0.55” (14 x 14mm) copper pad areas
-55 to +150
°C
°C
1of2

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Description 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB

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Index Files: 2223  557  830  2201  267  45  12  17  6  32 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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