SS32-SS36
3.0A Surface Mount Schottky Barrier Rectifier
Features
·
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
·
For surface mount applications
·
Low profile package
·
Built-in strain relief, ideal for automated placement
·
Easy pick and place
·
Metal silicon junction,
majority carrier conduction
·
Low power loss, high efficiency
·
High current capability, low forward voltage drop
·
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
·
High temperature soldering:
250°C/10 seconds at terminals
B
SMC
Dim
A
B
C
D
E
G
H
J
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
A
C
D
J
Mechanical Data
·
Case:
JEDEC DO-214AB molded plastic body
·
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
·
Polarity:
Color band denotes cathode end
·
Weight:
0.007 ounce 0.25 gram
H
G
E
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
SYMBOLS
SS32
SS33
SS34
SS35
SS36
UNITS
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L (SEE FIG. 1) (NOTE 2)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
(NOTE 1)
S2
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
20
14
20
S3
30
21
30
S4
40
28
40
3.0
100.0
S5
50
35
50
S6
60
42
60
Volts
Volts
Volts
Amps
Amps
V
F
(NOTE 1)
0.50
0.5
20.0
55.0
17.0
-55 to +125
-55 to +150
0.75
10.0
Volts
mA
°C/W
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25°C
T
A
=100°C
I
R
R
ΘJA
R
ΘJL
T
J
T
STG
Typical thermal resistance
(NOTE 2)
Operating junction temperature range
Storage temperature range
NOTES:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) P.C.B. mounted 0.55 x 0.55” (14 x 14mm) copper pad areas
-55 to +150
°C
°C
1of2
FIG. 1 - FORWARD CURRENT DERATING CURVE
RESISTIVE OR INDUCTIVE LOAD
AVERAGE FORWARD CURRENT,
AMPERES
3.0
SS32 - SS34
SS35 & SS36
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
80
60
40
20
0
1
AT RATED T
L
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
2.0
P.C.B. MOUNTED on
0.55 x 0.55” (14 x 14mm)
COPPER PAD AREAS
1.0
10
NUMBER OF CYCLES AT 60H
Z
100
0
50
60
70
80
90
100
110
120
130
140
150
160
FIG. 4- TYPICAL REVERSE CURRENT
CHARACTERISTICS
LEAD TEMPERATURE,°C
20
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
T
A
=125°C
30.0
T
J
=125°C
INSTANTANEOUS FORWARD CURRENT
AMPERES
10.0
T
J
=150°C
PULSE WIDTH=300µs
1% DUTY CYCLE
T
J
=25°C
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
1
T
A
=75°C
1
0.1
0.1
0.01
SS32 - SS34
SS35 & SS36
T
A
=25°C
0.01
0
0.2 0.4
0.6 0.8
1.0 1.2
1.4
1.6
SS32 - SS34
SS35 & SS36
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
1,000
T
J
=25°C
f=1.0 MHz
Vsig=50mVp-p
TRANSCIENT THERMAL IMPEDANCE,
°C/W
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
JUNCTION CAPACITANCE, pF
10.0
100
1
SS32 - SS34
SS35 & SS36
10
0.1
0.1
0.01
0.1
1
10.0
100
1
10
100
t, PULSE DURATION, sec.
REVERSE VOLTAGE, VOLTS
2of2
NXP MCU
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