UF1001 - UF1007
1.0A Axial Leaded Ultrafast Diode
Features
·
·
·
·
·
·
·
Diffused Junction
Ultra-Fast Switching for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Low Reverse Leakage Current
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
A
B
A
D
C
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.35 grams (approx.)
Mounting Position: Any
Dim
A
B
C
D
DO-41
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
A
= 55°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
qJA
T
j,
T
STG
UF
1001
50
35
@ T
A
= 25°C unless otherwise specified
UF
1002
100
70
UF
1003
200
140
UF
1004
400
280
1.0
30
UF
1005
600
420
UF
1006
800
560
UF
1007
1000
700
Unit
V
V
A
A
1.0
1.3
5.0
100
50
20
95
-65 to +150
1.7
V
mA
75
10
ns
pF
K/W
°C
Notes:
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
1 of 2
I
(AV)
, AVERAGE FWD RECTIFIED CURRENT (A)
Single phase half wave
Resistive or Inductive load
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1.00
10
T
j
= 25
°
C
Pulse width = 300
µ
s
0.75
1.0
UF1001 - UF1003
UF1004
0.50
0.25
0.1
UF1005 - UF1007
0
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
0
25
50
75
100
125
150
175
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
30
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
100
T
j
= 25
°
C
f = 1.0MHz
20
C
j
, CAPACITANCE (pF)
UF1001 - UF1004
10
UF1005 - UF1007
10
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
100
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t
rr
100
50
Ω
NI (Non-inductive)
Device
Under
Test
50V DC
Approx
10
Ω
NI
+0.5A
(-)
Pulse
Generator
(Note 2)
(+)
(-)
0A
-0.25A
1.0
Ω
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
Ω
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
Ω
.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
2 of 2
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
