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UF1003

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size70KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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UF1003 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

UF1001 - UF1007
1.0A Axial Leaded Ultrafast Diode
Features
·
·
·
·
·
·
·
Diffused Junction
Ultra-Fast Switching for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Low Reverse Leakage Current
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
A
B
A
D
C
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.35 grams (approx.)
Mounting Position: Any
Dim
A
B
C
D
DO-41
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
A
= 55°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
qJA
T
j,
T
STG
UF
1001
50
35
@ T
A
= 25°C unless otherwise specified
UF
1002
100
70
UF
1003
200
140
UF
1004
400
280
1.0
30
UF
1005
600
420
UF
1006
800
560
UF
1007
1000
700
Unit
V
V
A
A
1.0
1.3
5.0
100
50
20
95
-65 to +150
1.7
V
mA
75
10
ns
pF
K/W
°C
Notes:
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
1 of 2

UF1003 Related Products

UF1003 UF1002 UF1004 UF1007 UF1001 UF1005 UF1006
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41

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