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UF102

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size81KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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UF102 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

UF100-UF1010
1.0A Axial Leaded Ultrfast Switching Fast Rectifier
Features
·
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
·
Void-free Plastic in DO-41 package
·
1.0 ampere operation at T
A
=55
¢J
with no thermal runaway
·
Exceeds environmental standards of MIL-S-19500/228
·
Ultra fast switching for high efficiency
A
B
A
D
C
Mechanical Data
·
Case: Molded plastic, DO-41
·
Terminals: Axial leads, solderable per MIL-STD-202,
Method 208
·
Polarity: Band denotes cathode
·
Mounting Position: Any
·
Weight: 0.013 ounce, 0.3 gram
Dim
A
B
C
D
DO-41
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@ T
A
= 25°C unless otherwise specified
,
,
,
UF100
50
35
50
Peak Reverse Voltage, Pepetitive ; V
RM
Maximum RMS Voltage
DC Blocking Voltage; VR
Average Forward Current, Io @T
A
=55
¢J
3.8”
lead length, 60Hz, resistive or inductive load
Peak Forward Surge Current I
FM
(surge)
8.3msec. single half sine-wave
superimposed on rated load (JEDEC
method)
Maximum Forward Voltage V
F
@1.0A, 25
¢J
Maximum Reverse Current, @ Rated T
J
=25
¢J
Reverse Voltage T
J
=100
¢J
Typical Junction capacitance (Note 1) CJ
Typical Junction Resistance (Note 2) R
£K
JA
Reverse Recovery Time
I
F
=.5A, I
R
=1A, Irr=.25A
Operating and Storage Temperature Range
.
UF101
100
70
100
UF102
200
140
200
UF104
400
280
400
1.0
30.0
UF106
600
420
600
UF108
800
560
800
UF1010 UNITS
1000
V
700
V
1000
V
A
A
1.00
1.10
10.0
500
17.0
60.0
50
-55 TO +150
1.70
50
50
50
75
75
75
V
£g
A
£g
A
P
F
¢J
/W
ns
¢J
NOTES:
1.
Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2.
Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted
1 of 2

UF102 Related Products

UF102 UF100 UF108 UF101 UF1010 UF104 UF106
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
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