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ERA32-02

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size164KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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ERA32-02 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

ERA32-01—ERA32-02
1.0A Axial Leaded Rectifier
Features
·
Low cos t
·
D iffus ed junction
·
Low leakage
·
Low forw ard voltage drop
·
H igh current capability
·
Eas ily cleaned w ith Freon,Alcohol,Is opropanol
and s im ilar s olvents
·
The plas tic m aterial carries
U/L
recognition
94V -0
A
B
A
D
C
Mechanical Data
·
C as e:JED EC D O-41,m olded plas tic
·
Term inals : Axial lead ,s olderable per
MIL- STD -202,Method 208
·
Polarity: C olor band denotes cathode
Dim
A
B
C
D
DO-41
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
·
Weight: 0.012 ounces ,0.34 gram s
·
Mounting pos ition: Any
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@ T
A
= 25°C unless otherwise specified
ERA32 - 01
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
ERA32 - 02
200
140
200
1.0
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
40.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.92
5.0
50.0
50
20
60
- 55 ----- + 150
- 55 ----- + 150
V
ns
pF
/W
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
1 of 2

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