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ERA81-004

Description
1 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size337KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
Download Datasheet View All

ERA81-004 Overview

1 A, 40 V, SILICON, SIGNAL DIODE

ERA81-004
1.0A Axial Leaded Schottky Barrier Rectifier Diodes
Features
·
·
·
·
·
·
High current capability
H igh efficiency
High surge capability
High reliability
A
B
A
Low power loss
Lo w forward voltage drop
·
Lo w cost
Pb / RoHS Free
DO-41
Dim
A
B
C
D
Min
25.40
4.06
0.71
2.00
D
C
Mechanical Data
·
Case : DO-41 Molded plastic
·
Epo xy : UL94V-O rate flame retardant
·
Lead : A xial lead solderable per MIL-STD-202,
Method 208 guaranteed
·
Po larity : Color band denotes cathode end
·
Mount ing position : Any
·
W eight : 0.339 gram
Max
¾
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
T
L
= 115
°C
SYMBOL
V
RRM
V
DC
I
F(AV
)
I
FSM
VALUE
40
40
1.0
50
UNIT
V
V
A
A
Maximum Non-Repetitive Peak Forward Surge Current
(Sin wave, 10ms )
Maximum Forward Voltage at I
F
= 1.0 A
Maximum Reverse Current at V
R
= V
RRM
Junction Temperature Range
Storage Temperature Range
V
F
I
R
T
J
T
STG
0.55
2.0
- 40 to + 125
- 40 to + 125
V
mA
°C
°C
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Index Files: 1113  2499  1193  1932  1504  23  51  25  39  31 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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