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ESJA04-02A

Description
0.001 A, 2000 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size316KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
Download Datasheet View All

ESJA04-02A Overview

0.001 A, 2000 V, SILICON, SIGNAL DIODE

ESJA04-02A
1mA Axial Leaded High Voltage Silicon Diode
Features
Mechanical Data
·
Weight: 0.2 grams (approx.)
·
Vibration Proof:5 G
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Items
Repetitive peak reverse voltage
Non-repetitive peak forward current
Average forward current
Allowable junction temperature
Storage Temperature range
Allowable operating case temperature
Maximum forward voltage drop
Maximum reverse current
Maximum reverse current
Maximum reverse recovery time
Maximum junction capacitance
Conditions
50Hz Sine-half
wave peak value
50Hz Sine-wave
Symbols
V
RRM
I
FSM
I
AV
Tj
Tstg
Tc
Ratings
2
0.3
1
120
-40—120
100
12
2
5
0.08
3
Units
KV peak
A peak
mA
°
C
°
C
°
C
1F=10mA
VR=2KV
°
VR=2KV ,100C
VF
IR
1
IR
2
Trr
Cj
V
uA
uA
uS
PF
1F=2mA,1R=4mA
F=1MHz,VR=0V
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