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31DQ05

Description
3.3 A, 50 V, SILICON, RECTIFIER DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size1MB,3 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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31DQ05 Overview

3.3 A, 50 V, SILICON, RECTIFIER DIODE, DO-41

31DQ05-31DQ06
3.0A Axial Leaded Schottky Barrier Rectifiers
Features
·
Low profile, axial leaded outline
·
High frequency operation
·
Very low forward voltage drop
·
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
A
B
A
·
Guard ring for enhanced ruggedness and long term
reliability
·
Lead (Pb)-free plating
·
Designed and qualified for industrial level
D
C
DO-201AD
Mechanical Data
·
Case: molded plastic
Dim
A
B
C
D
Min
25.40
7.20
1.20
4.80
Max
¾
9.50
1.30
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
3 Apk, T
J
= 25 °C
CHARACTERISTICS
Rectangular waveform
@ T
A
= 25°C unless otherwise specified
VALUES
3.3
50/60
340
0.62
- 40 to 150
UNITS
A
V
A
V
°C
1 of 3

31DQ05 Related Products

31DQ05 31DQ06
Description 3.3 A, 50 V, SILICON, RECTIFIER DIODE, DO-41 3.3 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD

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Index Files: 2269  49  2533  2741  1918  46  1  51  56  39 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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