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BAV199DW_15

Description
Switching Diode Plastic-Encapsulate Diode
File Size86KB,1 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet View All

BAV199DW_15 Overview

Switching Diode Plastic-Encapsulate Diode

BAV199DW
Elektronische Bauelemente
Switching Diode Plastic-Encapsulate Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Surface Mount Package Ideally Suited For
Automatic Insertion.
Very Low Leakage Current.
A
E
6
5
4
SOT-363
L
MARKING:
K52
F
1
2
3
B
C
K
H
J
PACKAGE INFORMATION
Package
SOT-363
MPQ
3K
Leader Size
7 inch
Top View
DG
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
DC Reverse Voltage
Forward Continuous Current
T=1µs
Surge Current
Power Dissipation
Junction & Storage Temperature
T=10ms
T=1s
P
D
T
J
, T
STG
I
FSM
Symbol
V
RRM
V
R
I
FM
Value
85
85
160
4
1
0.5
200
150, -55~150
Unit
V
V
mA
A
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Symbol
V
(BR)
I
R
Min.
85
-
-
-
Typ.
-
-
-
-
-
-
2
-
Max.
-
5
0.9
1
Unit
V
nA
Test Conditions
I
R
=100µA
V
R
=75V
I
F
=1mA
Collector-Emitter Saturation Voltage
V
F
V
-
-
1.1
1.25
-
3
pF
µs
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,
I
RR
=0.1 x I
R
, R
L
=100
Junction Capacitance
Reverse Recovery Time
C
J
T
RR
-
-
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Mar-2012 Rev. A
Page 1 of 1
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