BC546 / BC547 / BC548
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURE
Power Dissipation
G
H
CLASSIFICATION OF h
FE
Product-Rank
Product-Rank
Product-Rank
Range
BC546A
BC547A
BC548A
110~220
BC546B
BC547B
BC548B
200~450
BC546C
BC547C
K
J
A
B
D
1
Collector
2
Base
3
Emitter
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
BC548C
420~800
E
C
F
Collector
1
2
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
BC546
BC547
BC548
BC546
BC547
BC548
Symbol
V
CBO
Ratings
80
50
30
65
45
30
6
100
625
150, -55~150
Unit
V
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction, Storage Temperature
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
V
V
mA
mW
°
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 1 of 4
BC546 / BC547 / BC548
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
BC546
BC547
BC548
BC546
Collector to Emitter Breakdown
BC547
Voltage
BC548
Emitter to Base Breakdown Voltage
BC546
Collector Cut-Off Current
BC547
BC548
BC546
Collector Cut-Off Current
BC547
BC548
BC546
Emitter Cut-Off Current
BC547
BC548
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector to Base Breakdown
Voltage
Symbol
V
(BR)CBO
Min.
80
50
30
65
45
30
6
-
-
-
-
-
-
-
-
-
110
-
-
150
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-
-
-
-
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
800
0.3
1.1
-
Unit
V
Test Conditions
I
C
=100µA, I
E
=0
V
(BR)CEO
V
(BR)EBO
I
CBO
V
V
µA
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=70V, I
E
=0
V
CB
=50V, I
E
=0
V
CB
=30V, I
E
=0
V
CE
=60V, I
B
=0
V
CE
=45V, I
B
=0
V
CE
=30V, I
B
=0
V
EB
=5V, I
C
=0
I
CEO
µA
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
µA
V
CE
=5V, I
C
=2mA
V I
C
=100mA, I
B
=5mA
V I
C
=100mA, I
B
=5mA
MHz V
CE
=5V, I
C
=10mA, f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 2 of 4
BC546 / BC547 / BC548
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 3 of 4
BC546 / BC547 / BC548
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 4 of 4
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