SMD Type
Switching Diodes
DAN202K
(KAN202K)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Diodes
Unit: mm
■
Features
+0.1
2.4
-0.1
●
High reliability
3
+0.1
1.3
-0.1
●
Ultra high speed switching
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
1
2
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Reverse Voltage
Reverse Voltage (DC)
Average rectified forward current (Single)
Average rectified forward current (double)
Forward Current (Single)
Forward Current (Double)
Surge current (t=1us) (Single)
Surge current (t=1us) (Double)
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
RM
V
R
Io
I
FM
I
surge
P
d
R
θJA
T
J
T
stg
Rating
80
80
100
150
300
450
4
6
200
556
150
-55 to 150
A
mW
℃/W
℃
mA
Unit
V
■
Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Capacitance between terminals
Reverse recovery time
Symbol
V
R
V
F
I
R
C
t
t
rr
Test Conditions
I
R
= 100 uA
I
F
= 100 mA
V
R
= 70 V
V
R
= 6 V, f= 1 MHz
V
R
=6V,I
F
=5mA, R
L
=50Ω
Min
80
1.2
0.1
3.5
4
Typ
Max
Unit
V
uA
pF
ns
■
Marking
Marking
N*
+0.1
0.38
-0.1
0-0.1
+0.1
0.97
-0.1
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1
SMD Type
Switching Diodes
DAN202K
(KAN202K)
■
Typical Characterisitics
Ta=150℃
100
Ta=75℃
Ta=125℃
Diodes
10000
1000
Ta=125℃
10
f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
Ta=75℃
100
Ta=25℃
10
1
0.1
0.01
Ta=-25℃
10
Ta=150℃
Ta=25℃
Ta=-25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
80
1
1
0.1
0
100 200 300 400 500 600 700 800 900 1000
0.1
0
10
20 30 40 50 60 70
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
950
100
10
Ta=25℃
VR=80V
n=30pcs
9
Ta=25℃
VR=6V
f=1MHz
n=10pcs
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
940
930
920
910
AVE:921.7m
900
Ta=25℃
IF=100mA
n=30pcs
90
80
70
60
50
40
30
20
10
0
AVE:9.655nA
8
7
6
5
4
3
2
1
0
AVE:1.17pF
VF DISPERSION MAP
20
10
IR DISPERSION MAP
5
Ct DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
9
8
7
6
5
4
3
2
1
0
AVE:1.93ns
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
15
1cyc
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
4
3
2
1
0
1
Ifsm
8.3ms 8.3ms
1cyc
10
5
AVE:3.50A
0
IFSM DISPERSION MAP
100
trr DISPERSION MAP
1000
10
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
Ifsm
Rth(j-a)
100
9
8
7
6
5
4
3
2
1
0
AVE:0.97kV
AVE:2.54kV
t
Rth(j-c)
Mounted on epoxy board
10
10
IM=100mA
IF=10A
1ms
time
300us
1
0.1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1
100
1
0.001
0.01
1
10
100
TIME:t(ms)
Rth-t CHARACTERISTICS
0.1
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2
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