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BAS40-04

Description
0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size818KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BAS40-04 Overview

0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE

SMD Type
Schottky Diodes
BAS40/-04/-05/-06
(KAS40/-04/-05/-06)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Diodes
Unit: mm
Features
+0.1
2.4
-0.1
Fast Switching
+0.1
1.3
-0.1
Low Forward Voltage
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
RRM
V
RWM
V
R
I
FM
P
d
R
θJA
T
J
T
stg
200
200
500
125
-55 to 150
mA
mW
℃/W
40
V
Rating
Unit
BAS40-05
BAS40-04
Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Symbol
V
R
V
F1
V
F2
I
R1
C
j
t
rr
I
F
= 1mA
I
F
= 40 mA
V
R
= 30 V
V
R
= 0 V, f= 1 MHz
I
F
=I
R
=10mA,Irr=1mA, R
L
=100Ω
Test Conditions
I
R
= 100 uA
Min
40
0.38
1
200
5
5
nA
pF
ns
V
Typ
Max
Unit
Marking
NO
Marking
BAS40
43
.
BAS40-06
46
BAS40-05
45
BAS40-04
44
0-0.1
BAS40
BAS40-06
+0.1
0.38
-0.1
+0.1
0.97
-0.1
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BAS40-04 BAS40-05 BAS40-06 BAS04 BAS40
Description 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 40 V, SILICON, SIGNAL DIODE
Number of terminals - 3 3 3 3
Number of components - 2 2 2 1
Processing package description - GREEN, PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
state - ACTIVE ACTIVE ACTIVE DISCONTINUED
packaging shape - RECTANGULAR Rectangle RECTANGULAR Rectangle
Package Size - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount - Yes Yes Yes Yes
Terminal form - GULL WING GULL WING GULL WING GULL WING
terminal coating - MATTE TIN OVER NICKEL tin MATTE TIN OVER NICKEL -
Terminal location - DUAL pair DUAL pair
Packaging Materials - PLASTIC/EPOXY Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy
Craftsmanship - SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure - COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS single
Diode component materials - SILICON silicon SILICON silicon
Maximum power consumption limit - 0.2000 W - 0.2000 W 0.2000 W
Diode type - SIGNAL DIODE Signal diode SIGNAL DIODE Signal diode
Maximum reverse recovery time - 0.0050 us - 0.0050 us 0.0050 us
Maximum repetitive peak reverse voltage - 40 V 40 V 40 V 40 V
Maximum average forward current - 0.2000 A 0.1200 A 0.2000 A 0.2000 A
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