BAS40 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > semiconductor> Discrete semiconductor> BAS40

Preview

BAS40: Description0.2 A, 40 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size818KB，2 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

Download Datasheet Parametric Compare View All

BAS40 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	BAS40	-	-	View	Buy Now

BAS40 Overview

0.2 A, 40 V, SILICON, SIGNAL DIODE

BAS40 Parametric

Parameter Name	Attribute value
Number of terminals	3
Number of components	1
Processing package description	GREEN, PLASTIC PACKAGE-3
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Diode component materials	silicon
Maximum power consumption limit	0.2000 W
Diode type	Signal diode
Maximum reverse recovery time	0.0050 us
Maximum repetitive peak reverse voltage	40 V
Maximum average forward current	0.2000 A

Preview

Download Datasheet

View All

SMD Type

Schottky Diodes

BAS40/-04/-05/-06

(KAS40/-04/-05/-06)

SOT-23

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Diodes

Unit: mm

■

Features

+0.1

2.4

-0.1

●

Fast Switching

+0.1

1.3

-0.1

●

Low Forward Voltage

1

2

0.95

+0.1

-0.1

+0.1

1.9

-0.1

0.55

0.4

3

+0.05

0.1

-0.01

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Forward Continuous Current

Power Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

Storage Temperature range

Symbol

V

RRM

V

RWM

V

R

I

FM

P

d

R

θJA

T

J

T

stg

200

500

125

-55 to 150

mA

mW

℃/W

℃

40

V

Rating

Unit

BAS40-05

BAS40-04

■

Electrical Characteristics Ta = 25℃

Parameter

Reverse breakdown voltage

Forward voltage

Reverse voltage leakage current

Junction capacitance

Reverse recovery time

Symbol

V

R

V

F1

V

F2

I

R1

C

j

t

rr

I

F

= 1mA

I

F

= 40 mA

V

R

= 30 V

V

R

= 0 V, f= 1 MHz

I

F

=I

R

=10mA,Irr=1mA, R

L

=100Ω

Test Conditions

I

R

= 100 uA

Min

40

0.38

1

200

5

nA

pF

ns

V

Typ

Max

Unit

■

Marking

NO

Marking

BAS40

43

.

BAS40-06

46

BAS40-05

45

BAS40-04

44

0-0.1

BAS40

BAS40-06

+0.1

0.38

-0.1

+0.1

0.97

-0.1

www.kexin.com.cn

1

BAS40 Related Products

	BAS40	BAS40-05	BAS40-06	BAS04	BAS40-04
Description	0.2 A, 40 V, SILICON, SIGNAL DIODE	0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB	0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals	3	3	3	3	-
Number of components	1	2	2	2	-
Processing package description	GREEN, PLASTIC PACKAGE-3	GREEN, PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	GREEN, PLASTIC PACKAGE-3	-
state	DISCONTINUED	ACTIVE	ACTIVE	ACTIVE	-
packaging shape	Rectangle	RECTANGULAR	Rectangle	RECTANGULAR	-
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
surface mount	Yes	Yes	Yes	Yes	-
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	-
Terminal location	pair	DUAL	pair	DUAL	-
Packaging Materials	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy	PLASTIC/EPOXY	-
Craftsmanship	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	-
structure	single	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	-
Diode component materials	silicon	SILICON	silicon	SILICON	-
Maximum power consumption limit	0.2000 W	0.2000 W	-	0.2000 W	-
Diode type	Signal diode	SIGNAL DIODE	Signal diode	SIGNAL DIODE	-
Maximum reverse recovery time	0.0050 us	0.0050 us	-	0.0050 us	-
Maximum repetitive peak reverse voltage	40 V	40 V	40 V	40 V	-
Maximum average forward current	0.2000 A	0.2000 A	0.1200 A	0.2000 A	-
terminal coating	-	MATTE TIN OVER NICKEL	tin	MATTE TIN OVER NICKEL	-

Recommended Resources

Three working states of transistors - PNP type - cut-off state

Overvoltage protection circuit with automatic reset

Zero sequence voltage phase failure protection circuit

Baojie 16R desktop heater circuit diagram

Oscillator circuit diagram using FETs and transistors

Photosensitive signal amplification circuit

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components