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GBU1010

Description
3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size828KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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GBU1010 Overview

3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBU1010 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage1000 V
Maximum average input current3.2 A
Processing package descriptionPLASTIC, GBU, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Shell connectionisolation
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage1000 V
Maximum non-repetitive peak forward current220 A
DIP Type
Bridge Rectifier
GBU10005 ~ GBU1010
Features
Io=10A
V
RRM
50V-1000V
Glass passivated chip
High surge forward current capability
.085(2.16)
.065(1.65)
.310(7.90)
.290(7.40)
.740(18.8)
.720(18.3)
Diodes
DIP
.880(22.3)
.860(21.8)
.160(4.1)
.140(3.5)
.140(3.56)
.130(3.30)
-
AC
+
.080(2.03)
.060(1.52)
.104(2.66)
.094(2.40)
.710(18.0)
.690(17.5)
.100(2.54)
.081(2.06)
.050(1.27)
.040(1.02)
.210(5.33)
.190(4.83)
.210(5.33)
.190(4.83)
.210(5.33)
.190(4.83)
.022(0.56)
.018(0.46)
Dimensions in inches and (millimeters)
Absolute Maximum Ratings Ta = 25℃
Item
Repetitive peak Reverse Voltage
Dielectric Strength
Average Rectified Output Current
60Hz sine wave,R-load
Current Squared Time
1ms≤t<8.3ms Rating of per diode
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Symbol
V
RRM
V
dis
Ta=80℃
Io
I
FSM
I
2
t
R
thJA
R
thJC
Tj
Tstg
GBU10
005
50
01
100
02
200
04
400
2
3.6
10
200
166
25
2.3
150
-55 to 150
06
600
08
800
10
1000
Unit
V
KV
A
Surge(Non-repetitive) Forward Current
A
2
S
/W
Junction Temperature
Storage Temperature
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
GBU10
005
01
02
Reverse breakdown voltage
V
R
I
R
=100uA
04
06
08
10
Forward voltage
Reverse voltage leakage current
V
FM
I
RRM
I
F
= 5A
V
RM
=V
RRM
d
Min
50
100
200
400
600
800
1000
1.1
10
uA
V
Typ
Max
Unit
www.kexin.com.cn
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GBU1010 Related Products

GBU1010 GBU10005 GBU1002 GBU1004 GBU1006 GBU1008 GBU1001
Description 3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

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