3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
| Parameter Name | Attribute value |
| Number of terminals | 4 |
| Number of components | 4 |
| Minimum breakdown voltage | 1000 V |
| Maximum average input current | 3.2 A |
| Processing package description | PLASTIC, GBU, 4 PIN |
| Lead-free | Yes |
| EU RoHS regulations | Yes |
| state | ACTIVE |
| packaging shape | Rectangle |
| Package Size | Flange mounting |
| Terminal form | THROUGH-hole |
| terminal coating | NOT SPECIFIED |
| Terminal location | single |
| Packaging Materials | Plastic/Epoxy |
| structure | Bridge, 4 ELEMENTS |
| Shell connection | isolation |
| Diode component materials | silicon |
| Diode type | bridge rectifier diode |
| Phase | 1 |
| Maximum repetitive peak reverse voltage | 1000 V |
| Maximum non-repetitive peak forward current | 220 A |

| GBU1010 | GBU10005 | GBU1002 | GBU1004 | GBU1006 | GBU1008 | GBU1001 | |
|---|---|---|---|---|---|---|---|
| Description | 3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE | 3.6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE | 3.6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE | 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | 3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE | 3.6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |