EN29LV160B
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on
ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the
compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
same as that of Eon delivered before. Please be advised with the change and appreciate your
kindly cooperation and fully support Eon’s product family.
Eon products’ New Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX
Lot Number: XXXXX
Date Code:
XXXXX
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as an Eon product. Any
changes that have been made are the result of normal data sheet improvement and are noted in
the document revision summary, where supported. Future routine revisions will occur when
appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Eon continues to support existing part numbers beginning with “Eon” and “cFeon” top marking. To
order these products, during the transition please specify “Eon top marking” or “cFeon top marking”
on your purchasing orders.
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
© 2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. I, Issue Date: 2011/10/26
EN29LV160B
EN29LV160B
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
•
3.0V, single power supply operation
- Minimizes system level power requirements
•
High performance
- Access times as fast as 70 ns
•
Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
μA
standby current
•
JEDEC Standard program and erase
commands
•
JEDEC standard DATA# polling and toggle
bits feature
•
Single Sector and Chip Erase
•
Sector Unprotect Mode
•
Embedded Erase and Program Algorithms
•
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
•
Triple-metal double-poly triple-well CMOS
Flash Technology
•
Low Vcc write inhibit < 2.5V
•
minimum 100K program/erase endurance
cycle
•
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm TFBGA
•
Industrial Temperature Range
•
Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and thirty-one 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and thirty-one 32-Kword sectors (word mode)
•
Sector protection :
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
•
-
-
-
High performance program/erase speed
Byte/Word program time: 8µs typical
Sector erase time: 100ms typical
Chip erase time: 4s typical
GENERAL DESCRIPTION
The EN29LV160B is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The
EN29LV160B features 3.0V voltage read and write operation, with access times as fast as 70ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector or
full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
© 2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. I, Issue Date: 2011/10/26
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