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AO6409A

Description
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.5A I(D),TSOP
Categorysemiconductor    Discrete semiconductor   
File Size2MB,4 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet Parametric View All

AO6409A Overview

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.5A I(D),TSOP

AO6409A Parametric

Parameter NameAttribute value
EU RoHS regulationsYes
stateContact Mfr
structureSingle
drain_current_max__abs___id_5.5 A
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT MODE
Maximum operating temperature150 Cel
larity_channel_typeP-CHANNEL
wer_dissipation_max__abs_2.1 W
sub_categoryOther Transistors
surface mountYES
SMD Type
P-Channel
MOSFET
AO6409A
(KO6409A)
( SOT-23-6 )
MOSFET
Unit: mm
0.4
-0.1
+0.1
Features
V
DS (V)
=-20V
I
D
=-5.5A (V
GS
=-4.5V)
R
DS(ON)
41mΩ (V
GS
=-4.5V)
R
DS(ON)
53mΩ (V
GS
=-2.5V)
R
DS(ON)
65mΩ (V
GS
=-1.8V)
ESD Rating: 2000V HBM
+0.2
-0.1
6
5
4
+0.2
1.6
-0.1
+0.2
2.8
-0.1
1
2
3
+0.01
-0.01
0.55
0.4
+0.02
0.15
-0.02
D
+0.1
1.1
-0.1
1 Drain 4 Source
2 Drain 5 Drain
3 Gate 6 Drain
G
S
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Junction Storage Temperature Range
T
A
=25°C
T
A
=70°C
t
10s
Steady-State
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJL
T
J
T
stg
Rating
-20
±8
-5.5
-4
-30
2.1
1.3
60
90
45
150
-55 to 150
℃/W
W
A
Unit
V
+0.1
0.68
-0.1
0-0.1
www.kexin.com.cn
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