Preliminary
Datasheet
BCR20CM-12LB
600V - 20A - Triac
Medium Power Use
Features
•
I
T (RMS)
: 20 A
•
V
DRM
: 600 V
•
I
FGTI
, I
RGTI
, I
RGT III
:30 mA(20mA)
Note6
•
Tj: 150 °C
•
Planar Passivation Type
•
Non-Insulated Type
N-G
R07DS1151EJ0100
Rev.1.00
Jan 29, 2014
Outline
Applications
Vacuum cleaner, electric heater, light dimmer, copying machine, and controller for other motor and heater
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Ratings
20
200
167
5
0.5
10
2
–40 to +150
–40 to +150
2.1
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Voltage class
12
600
720
Unit
V
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 126°C
Note3
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
Page 1 of 7
BCR20CM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Gate trigger curent
Note2
Ι
ΙΙ
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note5
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Rated value
Min.
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.1
—
10
1
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
3.0
1.5
1.5
1.5
1.5
30
Note6
30
30
Note6
—
—
1.2
—
—
Note6
Unit
mA
V
V
V
V
mA
mA
mA
V
V
°C/W
V/μs
Test conditions
Tj = 125°C, V
DRM
applied
Tj = 150°C, V
DRM
applied
Tc = 25°C, I
TM
= 30A,
instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Tj = 150°C, V
D
= 1/2 V
DRM
Junction to case
Note3, Note4
Tj = 125°C
Tj = 150°C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T
2
tab 1.5 mm apart from the molded case.
4. The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C /W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
6. High sensitivity (I
GT
≤20
mA) is also available. (I
GT
item: 1)
Test conditions
1. Junction temperature
Tj = 125/150°C
2. Peak off-state voltage
V
D
= 400 V
3. Rate of decay of on-state commutating current
(di/dt)c = –10 A/ms
Commutating voltage and current waveforms
(inductive load)
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
Page 2 of 7
BCR20CM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
10
3
240
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
200
160
120
80
40
10
2
Tj = 150°C
10
1
Tj = 25°C
10
0
0
1
2
3
4
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
V
GM
= 10V
Gate Voltage (V)
10
1
V
GT
= 1.5V
10
0
P
GM
= 5W
P
G(AV)
=
0.5W
I
GM
=
2A
10
2
I
FGT I
I
FGT I
, I
RGT I
, I
RGT III
10
−1
10
1
10
2
10
3
10
4
I
RGT I
I
RGT III
10
1
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
−1
10
0
10
1
10
2
10
3
Typical Example
10
2
10
1
–40
0
40
80
120
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
Page 3 of 7
BCR20CM-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
140
Maximum On-State Power Dissipation
40
On-State Power Dissipation (W)
30
360° Conduction
Resistive,
inductive loads
20
Case Temperature (°C)
15
20
25
30
120 Curves apply regardless
of conduction angle
100
80
60
40
360° Conduction
20 Resistive,inductive
loads
0
0
10
10
0
0
5
10
20
30
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
All fins are black painted
aluminum and greased
160 160 t2.3
120 120 t2.3
100 100 t2.3
Allowable Ambient Temperature vs.
RMS On-State Current
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Ambient Temperature (°C)
120
100
80
60
Curves apply
regardless of
40
conduction angle.
Resistive,
20
inductive loads
Natural convection
0
0
5
10
Ambient Temperature (°C)
30
140
140
120
100
80
60
40
20
0
0
1
2
15
20
25
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
10
5
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
Typical Example
10
4
10
2
10
3
10
2
–40
0
40
80
120
160
10
1
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
Page 4 of 7
BCR20CM-12LB
Latching Current vs.
Junction Temperature
10
3
Preliminary
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Typical Example
Latching Current (mA)
Distribution T +, G–
2
Typical Example
10
2
10
1
T
2
+, G+
Typical Example
T
2
–, G–
10
0
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
160
140
120
100
80
60
40
20
0
1
10
10
2
10
3
10
4
I Quadrant
III Quadrant
Typical Example
Tj = 125°C
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
0
1
10
10
2
10
3
10
4
I Quadrant
III Quadrant
Typical Example
Tj = 150°C
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
10
2
Commutation Characteristics (Tj=150°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
10
1
Minimum
Characteristics
Value
III Quadrant
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 150°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
10
1
I Quadrant
III Quadrant
Minimum
Characteristics
Value
10
0
I Quadrant
10
0
3
10
1
30
10
2
3
10
1
30
10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
Page 5 of 7
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