SMD Type
N-Channel
MOSFET
AP9974
TO-252
+0.15
1.50
-0.15
MOSFET
Unit: mm
+0.15
6.50
-0.15
+0.2
5.30
-0.2
+0.1
2.30
-0.1
■
Features
●
V
DS (V)
= 60V
+0.2
9.70
-0.2
0.50
+0.8
-0.7
●
R
DS(ON)
＜
12mΩ (V
GS
= 10V)
●
R
DS(ON)
＜
15mΩ (V
GS
= 4.5V)
●
Single Drive Requirement
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4 .60
+0.15
-0.15
+
0.60
- 0.1
0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
●
I
D
= 68 A (V
GS
= 10V)
1 Gate
2 Drain
3 Source
D
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Tc=25℃
Tc=25℃
Tc=100℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
T
stg
Rating
60
±20
68
43
272
104
62.5
1.2
150
-55 to 150
W
℃/W
A
Unit
V
℃
3
.8
0
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1
SMD Type
N-Channel
MOSFET
AP9974
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
SD
I
F
= 10A, V
GS
=0, d
I
/d
t
= 100A/μs
I
S
=45A,V
GS
=0V
V
GS
=10V, V
DS
=30V,
I
D
=30A,R
L
=1Ω,R
G
=3.3Ω
V
GS
=4.5V, V
DS
=48V, I
D
=30A
V
GS
=0V, V
DS
=25V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=45A
V
GS
=4.5V, I
D
=30A
V
DS
=10V, I
D
=30A
1
Min
60
MOSFET
Typ
Max
10
250
±100
3
12
15
Unit
V
uA
nA
V
mΩ
S
55
2055
260
200
28
5
19
9
8
42
20
35
43
1.3
45
3300
pF
nC
ns
nC
V
2
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SMD Type
N-Channel
MOSFET
AP9974
■
Typical Characterisitics
200
MOSFET
T
C
=25
o
C
160
10V
7.0V
5.0V
I
D
, Drain Current (A)
100
T
C
= 150 C
80
o
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
120
4.5V
60
80
40
40
20
V
G
=3.0V
V
G
=3.0V
0
0
2
4
6
8
10
12
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
Fig 2. Typical Output Characteristics
2.0
I
D
= 30 A
o
T
C
=25 C
14
I
D
=45A
V
G
=10V
Normalized R
DS(ON)
1.6
R
DS(ON)
(m
Ω
)
12
1.2
10
0.8
8
0.4
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
40
1.5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Normalized V
GS(th)
(V)
1.2
30
1.1
I
S
(A)
20
T
j
=150
o
C
T
j
=25
o
C
0.7
10
0
0
0.2
0.4
0.6
0.8
1
0.3
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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3
SMD Type
N-Channel
MOSFET
AP9974
■
Typical Characterisitics
14
10000
MOSFET
f=1.0MHz
I
D
= 30 A
12
V
GS
, Gate to Source Voltage (V)
10
C (pF)
8
V
DS
= 30 V
V
DS
= 36 V
V
DS
= 48 V
C
iss
1000
6
4
2
C
oss
C
rss
100
0
10
20
30
40
50
60
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
1000
1
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
0.2
I
D
(A)
0.1
10
1
1ms
10ms
100ms
DC
T
C
=25
o
C
Single Pulse
0.1
0.05
P
DM
t
0.02
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.1
0.1
1
10
100
.
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
100
Fig 10. Effective Transient Thermal Impedance
V
G
Q
G
4.5V
V
DS
=5V
80
T
j
=25 C
o
T
j
=150 C
o
I
D
, Drain Current (A)
60
Q
GS
40
Q
GD
20
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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