SMD Type
N-Channel
MOSFET
IRF630S
(KRF630S)
MOSFET
■
Features
●
V
DS (V)
= 200V
●
I
D
= 9 A (V
GS
= 10V)
●
R
DS(ON)
＜
400mΩ (V
GS
= 10V)
●
Fast switching
●
Low thermal resistance
d
g
s
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Peak Non-Repetitive Avalanche Current
Power Dissipation
Non-Repetitive Avalanche Energy
Thermal Resistance.Junction- to-Ambient
Thermal Resistance Junction to Mounting Base
Junction Temperature
Storage Temperature Range
Ta = 25℃
Ta = 100℃
Symbol
V
DS
V
DG
V
GS
I
D
I
DM
I
AS
P
D
E
AS
R
thJA
R
thJB
T
J
T
stg
Rating
200
200
±20
9
6.3
36
9
88
250
50
1.7
175
-55 to 175
W
mJ
℃/W
A
V
Unit
℃
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1
SMD Type
N-Channel
MOSFET
IRF630S
(KRF630S)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Internal Drain Inductance
Internal Source Inductance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
L
D
L
S
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
I
SM
V
SD
I
S
=9A,V
GS
=0V
I
F
= 9 A; dIF/dt = 100 A/us;
V
GS
= -10 V; V
R
= 25 V
V
GS
=10V, V
DS
=100V, R
L
=10Ω,R
G
=5.6Ω
Measured tab to centre of die
V
GS
=10V, V
DS
=160V, I
D
=5.9A
V
GS
=0V, V
DS
=25V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
I
D
=250μA, V
GS
=0V , T
J
= 55℃
V
DS
=200V, V
GS
=0V
V
DS
=160V, V
GS
=0V, T
J
=175℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=1mA
V
GS
=10V, I
D
=5.4A
V
GS
=10V, I
D
=5.4A
V
DS
=25V, I
D
=5.4A
T
J
=175℃
3.8
2
Min
200
178
MOSFET
Typ
Max
Unit
V
10
250
±100
4
0.4
1.12
9
959
93
54
39
6.3
21
3.5
7.5
8
19
25
15
92
0.5
9
36
1.2
uA
nA
V
Ω
S
pF
nC
nH
ns
nC
A
V
■
Typical Characterisitics
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Mounting Base temperature, Tmb (C)
175
0.1
1
Normalised Power Derating, PD (%)
10
Transient thermal impedance, Zth j-mb (K/W)
D = 0.5
0.2
0.1
0.05
0.02
single pulse
T
1E-04
1E-03
1E-02
1E-01
1E+00
P
D
tp
D = tp/T
0.01
1E-06
1E-05
Pulse width, tp (s)
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
2
www.kexin.com.cn
SMD Type
N-Channel
MOSFET
IRF630S
(KRF630S)
■
Typical Characterisitics
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
Mounting Base temperature, Tmb (C)
150
175
Normalised Current Derating, ID (%)
10
9
8
7
6
5
4
3
2
1
0
0
0.2
0.4
Drain Current, ID (A)
Tj = 25 C
MOSFET
VGS = 10V
8V
6V
5.5 V
5V
4.5 V
0.6
0.8
1
1.2
1.4
Drain-Source Voltage, VDS (V)
1.6
1.8
2
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); V
GS
≥
10 V
Peak Pulsed Drain Current, IDM (A)
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
)
100
0.5
RDS(on) = VDS/ ID
0.45
tp = 10 us
100 us
D.C.
1 ms
10 ms
100 ms
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
1
10
100
Drain-Source Voltage, VDS (V)
1000
Drain-Source On Resistance, RDS(on) (Ohms)
4.5 V
5V
Tj = 25 C
10
5.5 V
6V
VGS = 10V
1
8V
0.1
0
1
2
3
4
5
6
Drain Current, ID (A)
7
8
9
10
Fig.3. Safe operating area
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
10
9
8
7
6
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Gate-source voltage, VGS (V)
175 C
Tj = 25 C
Drain current, ID (A)
VDS > ID X RDS(ON)
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction Temperature, Tj (C)
typical
minimum
Threshold Voltage, VGS(TO) (V)
maximum
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
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3
SMD Type
N-Channel
MOSFET
IRF630S
(KRF630S)
■
Typical Characterisitics
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Transconductance, gfs (S)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
MOSFET
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
Drain current, ID (A)
minimum
typical
maximum
0
1
2
3
4
5
6
Drain current, ID (A)
7
8
9
10
0
0.5
1
1.5
2
2.5
3
3.5
Gate-source voltage, VGS (V)
4
4.5
5
Fig.8. Typical transconductance, T
j
= 25 ˚C
.
g
fs
= f(I
D
)
Normalised On-state Resistance
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60
-40
-20
0
20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
10000
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C
Capacitances, Ciss, Coss, Crss (pF)
Ciss
1000
100
Coss
Crss
10
0.1
1
10
Drain-Source Voltage, VDS (V)
100
.
Fig.9. Normalised drain-source on-state resistance. Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
)
10
9
8
7
6
5
4
3
2
1
0
Source-Drain Diode Current, IF (A)
VGS = 0 V
10
Maximum Avalanche Current, I
AS
(A)
25 C
175 C
Tj prior to avalanche = 150 C
Tj = 25 C
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0.1
0.001
0.01
0.1
Avalanche time, t
AV
(ms)
1
10
Source-Drain Voltage, VSDS (V)
Fig.13. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.14. Maximum permissible non-repetitive
avalanche current (I
AS
) versus avalanche time (t
AV
);
unclamped inductive load
4
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