SMD Type
N-Channel
MOSFET
IRF840S
(KRF840S)
MOSFET
■
Features
●
V
DS (V)
=500V
●
I
D
=8 A (V
GS
= 10V)
●
R
DS(ON)
＜0.85Ω
(V
GS
= 10V)
●
Fast switching
●
Low thermal resistance
d
g
s
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Power Dissipation
Non-Repetitive Avalanche Energy (Note.1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note.2)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance Junction to Mounting Base
Junction Temperature
Storage Temperature Range
Tc = 25℃
Ta = 25℃
Ta = 25℃
Ta = 100℃
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
P
D
E
AS
E
AR
dv/dt
R
thJA
R
thJB
T
J
T
stg
Rating
500
±20
8
5.1
32
8
125
3.1
510
13
3.5
60
0.85
150
-55 to 150
W
mJ
V/ns
℃/W
A
Unit
V
℃
Note.1: L = 14mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25Ω , Starting T
J
= 25°C.
Note.2: I
SD
≤
8 A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, Starting T
J
≤
25°C.
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1
SMD Type
N-Channel
MOSFET
IRF840S
(KRF840S)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Internal Drain Inductance
Internal Source Inductance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
L
D
L
S
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
I
SM
V
SD
I
S
=8A,V
GS
=0V,T
J
= 25°C
T
J
= 25°C, I
F
= 8A, dI/dt = 100A/μs
V
DD
= 250 V, I
D
= 8 A,
R
g
= 9.1Ω, R
D
= 31Ω (Note.1)
V
GS
=10V, V
DS
=400V, I
D
=8A
V
GS
=0V, V
DS
=25V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=500V, V
GS
=0V
V
DS
=400V, V
GS
=0V,T
J
=125℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=4.8A
V
DS
=50V, I
D
=4.8A
(Note.1)
(Note.1)
4.9
2
Min
500
MOSFET
Typ
Max
25
250
±100
4
0.85
Unit
V
uA
nA
V
Ω
S
1300
310
120
63
9.3
32
4.5
nH
7.5
14
23
49
20
970
8.9
8
A
32
2
V
uC
ns
nC
pF
Note.1: Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%.
2
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