SCT04N60P
Triac
600V, 4A STANDARD TRIAC
This device is suitable for low power AC switching application,
phase control application such as fan speed and temperature
modulation control, lighting control and static switching relay.
Features
Repetitive Peak Off-State Voltage : V
DRM
=600V
R.M.S On-State Current : I
T(RMS)
=4A
High Commutation:
(dI/dt)
C
= 2.5
A/㎳(Min)
1 2
3
TO-220AB-3L
Rating
4A
600V
Product Characteristics
Symbol
I
T(RMS)
V
DRM
Marking Diagram
Applications
Switching mode power supply, light dimmet
TV sets, stereo, refrigerator, washing machine
Electric blanket, solenoid driver, small motor control
Photo copier, electric tool
Ordering Information
Device
Marking Code
Package
Packaging
SCT04N60P
SCT04N60
TO-220AB-3L
Tube
Column 1 : Manufacture Logo
Column 2 : Production Information
-
△
: Factory Management Code
- YMDD : Date Code(Year, Month, Date)
Column 3 : Device code
Absolute Maximum Ratings
(Limiting Values)
Characteristic
Repetitive Peak Off-state Voltage
RMS on-state current (full sine wave)
Non- repetitive surge peak on-state current
(full cycle, Tj initial = 25℃)
I
2
t Value for fusing
Peak gate current
Peak gate power dissipation
Average gate peak dissipation
Storage temperature range
Operating junction temperature range
KSD-S0P001-002
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
I
GM
P
GM
P
G(AV)
T
stg
T
j
Value
600
4
38
6
4
5
0.5
-40 to +150
-40 to +125
Unit
V
A
A
A
2
s
A
W
W
℃
℃
1
SCT04N60P
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case (AC)
Maximum thermal resistance junction to ambient (AC)
Symbol
R
th(j-c)
R
th(j-a)
Value
3.0
60
Unit
℃/W
℃/W
Electrical Characteristics
(T
J
=25℃, unless otherwise specified)
Off Characteristics
Characteristic
Repetitive peak Off-state current
Repetitive peak reverse current
Symbol
I
DRM
I
RRM
Test Condition
V
D
= V
DRM
V
R
= V
RRM
Min.
-
-
Typ.
-
-
Max.
5
5
Unit
uA
μ
A
On Characteristics
Characteristic
Peak On-state voltage
Holding current
Gate trigger current
Gate trigger voltage
Gate Non-trigger voltage
Symbol
V
TM
I
H
I
GT
(
Ⅰ-Ⅱ-Ⅲ
)
I
GT
(
Ⅳ
)
V
GT
(
Ⅰ-Ⅱ-Ⅲ
)
V
GD
Test Condition
I
T
= 5.5A
V
D
= 12V, I
T
= 0.2A
V
D
= 12V, R
L
= 30Ω
-
V
D
= 12V, R
L
= 30Ω
V
D
= 2/3 V
DRM
, T
j
=125℃
Min.
-
-
-
-
-
0.2
Typ.
-
-
-
-
-
-
Max.
1.55
40
30
-
1.3
-
Unit
V
mA
mA
mA
V
V
Dynamic Characteristics
Characteristic
Critical rate of rise
of Off-state Voltage
Rate of Change of Commutation
Current
Critical rate of rise of on-state
current
Symbol
(dV/dt)
S
(dI/dt)
C
dI/dt
Test Condition
V
D
= 2/3 V
DRM
, T
j
=125℃
(dV/dt)
C
=10V/㎲↓,
T
j
=125℃
f=120hz, I
G
= 2×I
GT
t
r
≤100 ㎱,
T
j
=125℃
Min.
100
2.5
-
Typ.
-
-
-
Max.
-
-
50
Unit
V/
μ
S
A/㎳
A/
μ
S
Simple circuit for (dV/dt)
S
Simple circuit for (dI/dt)
C
vs (dV/dt)
C
Simple circuit for dI/dt
KSD-S0P001-002
2
RF/Wirelessly
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