SMD Type
NPN Transistors
2SC3357-HF
Transistors
1.70
0.1
■
Features
●
Low noise and high gain
●
High power gain
●
Large P
tot
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
0.42 0.1
0.46 0.1
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction to Ambient Resistance
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
th (j-a)
T
J
T
stg
Rating
20
12
3
100
1.2
62.5
150
-55 to 150
mA
W
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
(Note.1)
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
|S
21e
|
NF
C
re
f
T
2
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 20V , I
E
= 0
V
EB
= 3V , I
C
=0
I
C
=50 mA, I
B
=5mA
I
C
=50 mA, I
B
=5mA
V
CE
= 10V, I
C
= 20mA
V
CE
= 10V, I
C
= 20mA, f= 1GHz
V
CE
= 10V, I
C
= 7mA, f= 1GHz
V
CE
= 10V, I
C
= 40mA, f= 1GHz
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 10V, I
C
= 20mA
Min
20
12
3
Typ
Max
Unit
V
1
1
0.4
1.2
50
9
1.1
1.8
6.5
3
1
250
uA
V
dB
pF
GHz
Note.1: Pulse measurement: PW
≤
350 us, Duty Cycle
≤
2%
■
Classification of h
fe
Type
Range
Marking
2SC3357-H-HF 2SC3357-F-HF 2SC3357-E-HF
50-100
RH
F
80-160
RF
F
125-250
RE
F
www.kexin.com.cn
1
SMD Type
NPN Transistors
2SC3357-HF
■
Typical Characterisitics
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
Total Power Dissipation P
tot
(W)
Transistors
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
f = 1 MHz
2
Ceramic substrate
16 cm
2
×
0.7 mm (t)
1
Free air R
th (j-a)
312.5˚C/W
1
0.5
0
25
50
75
100
125
150
0.3
0.2
0.5
1
2
5
10
20 30
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
5
3
2
1
0.5
0.3
0.2
0.1
0.1
0.5
1
5
10
50 100
V
CE
= 10 V
V
CE
= 10 V
DC Current Gain h
FE
100
50
20
10
0.5
1
5
10
50
Collector Current I
C
(mA)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
Insertion Power Gain |S
21e
|
2
(dB)
25
MAG
20
15
10
5
0
0.05
|S
21e
|
2
V
CE
= 10 V
f = 1 GHz
10
5
V
CE
= 10 V
I
C
= 20 mA
0.1
0.2
0.5
1
2
0
0.5
1
5
10
50 70
Frequency f (GHz)
Collector Current I
C
(mA)
2
www.kexin.com.cn
京公网安备 11010802033920号
EEWORLD
