SMD Type
NPN Transistors
MMBTA45
(KMBTA45)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
1
2
●
Complement to MMBTA93
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
●
High Collector-Emitter Voltage
+0.1
1.3
-0.1
■
Features
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current -Pulsed
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
R
θJA
T
J
T
stg
Rating
400
350
6
200
300
350
357
150
-55 to 150
mA
mW
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *1
Base - emitter saturation voltage *1
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 400 V , I
E
= 0
V
EB
= 4V , I
C
=0
Min
400
350
6
100
100
0.2
0.3
0.75
50
80
40
40
7
50
pF
MHz
300
V
nA
V
Typ
Max
Unit
V
CE(sat)1
I
C
=10 mA, I
B
=1mA
V
CE(sat)2
I
C
=50 mA, I
B
=5mA
V
BE(sat)
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
C
ob
f
T
I
C
=10 mA, I
B
=1mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 100mA
V
CB
= 20V, I
E
= 0,f=1MHz
VC
E
=20, I
C
= 10mA,f=30MHz
DC current gain *1
Collector output capacitance
Transition frequency
*1: Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
■
Classification of h
fe(2)
Type
Range
Marking
MMBTA45
80-300
3D
MMBTA45-L
100-200
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1
SMD Type
NPN Transistors
MMBTA45
■
Typical Characterisitics
16
14
Transistors
(KMBTA45)
Static Characteristic
80uA
72uA
64uA
56uA
48uA
COMMON
EMITTER
T
a
=25
℃
h
FE
1000
h
FE
—— I
C
V
CE
= 10V
(mA)
12
10
8
6
4
2
0
T
a
=100
℃
I
C
COLLECTOR CURRENT
DC CURRENT GAIN
T
a
=25
℃
100
40uA
32uA
24uA
16uA
I
B
=8uA
0
5
10
15
20
10
0.1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
1
10
I
C
(mA)
100
1.0
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=10
300
V
CEsat
——
β=10
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
T
a
=25
℃
0.6
100
T
a
=100
℃
T
a
=25
℃
30
T
a
=100
℃
0.4
0.2
0.0
0.1
1
10
100
10
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
500
C
ob
/ C
ib
——
V
CB
/
V
EB
COLLECTOR POWER DISSIPATION
P
c
(mW)
f=1MHz
I
E
=0 / I
C
=0
400
350
300
250
200
150
100
50
P
c
——
T
a
(pF)
100
C
ib
T
a
=25
℃
CAPACITANCE
C
10
C
ob
1
0.1
REVERSE VOLTAGE
1
V
(V)
10
20
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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