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MMBTA45

Description
NPN Transistors
File Size1MB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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MMBTA45 Overview

NPN Transistors

SMD Type
NPN Transistors
MMBTA45
(KMBTA45)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
1
2
Complement to MMBTA93
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
High Collector-Emitter Voltage
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current -Pulsed
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
R
θJA
T
J
T
stg
Rating
400
350
6
200
300
350
357
150
-55 to 150
mA
mW
℃/W
V
Unit
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *1
Base - emitter saturation voltage *1
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
Test Conditions
Ic= 100 μA, I
E
= 0
Ic= 1 mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 400 V , I
E
= 0
V
EB
= 4V , I
C
=0
Min
400
350
6
100
100
0.2
0.3
0.75
50
80
40
40
7
50
pF
MHz
300
V
nA
V
Typ
Max
Unit
V
CE(sat)1
I
C
=10 mA, I
B
=1mA
V
CE(sat)2
I
C
=50 mA, I
B
=5mA
V
BE(sat)
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
C
ob
f
T
I
C
=10 mA, I
B
=1mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 100mA
V
CB
= 20V, I
E
= 0,f=1MHz
VC
E
=20, I
C
= 10mA,f=30MHz
DC current gain *1
Collector output capacitance
Transition frequency
*1: Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
Classification of h
fe(2)
Type
Range
Marking
MMBTA45
80-300
3D
MMBTA45-L
100-200
www.kexin.com.cn
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