SMD Type
NPN Transistors
3DD13002
Transistors
■
Features
●
Collector Current Capability I
C
=1A
●
Collector Emitter Voltage V
CEO
=400V
●
Power Switching Applications
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
600
400
6
1
0.5
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Fall time
Storage time
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
t
f
t
s
f
T
Test Conditions
Ic= 100
μA，
I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 600 V , I
E
= 0
V
CE
= 400 V , I
E
= 0
V
EB
= 7V , I
C
=0
I
C
=200 mA, I
B
=40mA
I
C
=200 mA, I
B
=40mA
V
CE
= 10V, I
C
= 200mA
V
CE
= 10V, I
C
= 0.25mA
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
V
CE
= 10V, I
C
= 100mA,f=1MHz
5
10
5
0.5
2.5
uS
MHz
Min
600
400
6
100
100
100
0.5
1.1
40
V
uA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
3DD13002A
10-15
13002A
3DD13002B
15-20
13002B
3DD13002C
20-25
13002C
3DD13002D
25-30
13002D
3DD13002E
35-35
13002E
3DD13002F
35-40
13002F
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1
SMD Type
NPN Transistors
3DD13002
■
Typical Characterisitics
250
Transistors
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
10mA
100
h
FE
——
I
C
COLLECTOR CURRENT I
C
(mA)
200
8mA
150
7mA
6mA
DC CURRENT GAIN h
FE
9mA
T
a
=100
℃
T
a
=25
℃
10
100
5mA
4mA
50
3mA
2mA
COMMON EMITTER
V
CE
= 10V
10
1
0.1
1
10
100
1000
0
I
B
=1mA
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
CEsat
——
I
C
10
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
T
a
=100
℃
100
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
1
T
a
=25
℃
T
a
=25
℃
T
a
=100
℃
10
β=5
5
10
100
1000
0.1
β=5
5
10
100
1000
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
1000
I
C
——
V
BE
TRANSITION FREQUENCY f
T
(MHz)
10
f
T
——
I
C
COLLECTOR CURRENT I
C
(mA)
100
T =1
00
℃
a
10
1
T =2
5
℃
a
COMMON EMITTER
V
CE
=10V
0.1
0.0
0.3
0.6
0.9
1.2
COMMON EMITTER
V
CE
=10V
1
T
a
=25
℃
100
10
BASE-EMMITER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
200
5000
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
0.60
P
C
——
T
a
1000
C
ib
100
10
C
ob
1
0.1
COLLECTOR POWER DISSIPATION
P
C
(W)
T
a
=25
℃
0.50
CAPACITANCE C (pF)
0.40
0.30
0.20
0.10
0.00
1
10
20
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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