3DD13002_15 datasheet, PDF - EEWORLD Datasheet

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3DD13002_15: DescriptionNPN Transistors; File Size1MB，2 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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3DD13002_15 Overview

NPN Transistors

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SMD Type

NPN Transistors

3DD13002

Transistors

■

Features

●

Collector Current Capability I

C

=1A

●

Collector Emitter Voltage V

CEO

=400V

●

Power Switching Applications

0.42 0.1

1.70

0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

stg

Rating

600

400

6

1

0.5

150

-55 to 150

A

W

℃

V

Unit

■

Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector- emitter cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Fall time

Storage time

Transition frequency

Symbol

V

CBO

V

CEO

V

EBO

I

CBO

I

CEO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE(1)

h

FE(2)

t

f

t

s

f

T

Test Conditions

Ic= 100

μA，

I

E

= 0

Ic= 1 mA， I

B

= 0

I

E

= 100μA， I

C

= 0

V

CB

= 600 V , I

E

= 0

V

CE

= 400 V , I

E

= 0

V

EB

= 7V , I

C

=0

I

C

=200 mA, I

B

=40mA

I

C

=200 mA, I

B

=40mA

V

CE

= 10V, I

C

= 200mA

V

CE

= 10V, I

C

= 0.25mA

I

C

=1A, I

B1

=-I

B2

=0.2A

V

CC

=100V

V

CE

= 10V, I

C

= 100mA,f=1MHz

5

10

5

0.5

2.5

uS

MHz

Min

600

400

6

100

0.5

1.1

40

V

uA

V

Typ

Max

Unit

■

Classification of h

fe(1)

Type

Range

Marking

3DD13002A

10-15

13002A

3DD13002B

15-20

13002B

3DD13002C

20-25

13002C

3DD13002D

25-30

13002D

3DD13002E

35-35

13002E

3DD13002F

35-40

13002F

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