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BD5349

Description
Processor Supervisor 4.9V 1 Active Low/CMOS 5-Pin VSOF
File Size975KB,19 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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BD5349 Overview

Processor Supervisor 4.9V 1 Active Low/CMOS 5-Pin VSOF

Datasheet
Voltage Detector IC Series
Free Delay Time Setting
CMOS Voltage Detector IC Series
BD52xx series
General Description
Rohm's BD52xx and BD53xx series are highly
accurate, low current consumption Voltage Detector
ICs with a capacitor-controlled time delay. The line up
includes BD52xx devices with N channel open drain
output and BD53xx devices with CMOS output. The
devices are available for specific detection voltages
ranging from 2.3V to 6.0V in increments of 0.1V.
BD53xx series
Key Specifications
2.3V to 6.0V (Typ.)
0.1V steps
High accuracy detection voltage:
±1.0%
Ultra-low current consumption:
0.95µA (Typ.)
Package
W(typ) x D(typ) x H(max)
SSOP5:
2.90mm x 2.80mm x 1.25mm
VSOF5:
1.60mm x 1.60mm x 0.60mm
Detection voltage:
Features
Delay Time Controlled by external Capacitor
Two output types (N channel open drain and CMOS
output)
Ultra-low current consumption
Very small and low height package
Package SSOP5 is similar to SOT-23-5(JEDEC)
T
ypical Application Circuit
V
DD1
R
L
BD52xx
C
T
C
L
(Capacitor for
noise filtering)
Applications
Circuits using microcontrollers or logic circuits that
require a reset.
V
DD2
V
DD1
R
ST
Micro
controller
BD53xx
C
T
Micro
R
ST
controller
C
L
(Capacitor for
noise filtering)
GND
GND
Open Drain Output type
BD52xx Series
Connection Diagram
SSOP5
TOP VIEW
CMOS Output type
BD53xx Series
VSOF5
TOP VIEW
C
T
N.C.
V
DD
GND
4
5
Marking
Lot. No
V
DD
GND
Function
Reset Output
Power Supply Voltage
GND
PIN No.
1
2
3
4
5
Pin Descriptions
PIN No.
1
2
3
4
5
Symbol
V
OUT
V
DD
GND
N.C.
C
T
V
OUT
Marking
1 2 3
V
OUT
SUB C
T
VSOF5
Symbol
V
OUT
SUB
C
T
GND
V
DD
Lot. No
SSOP5
Unconnected Terminal
Capacitor connection terminal for
output delay time
Function
Reset Output
Substrate*
Capacitor connection terminal for
output delay time
GND
Power Supply Voltage
*Connect the substrate to GND.
○Product
structure:Silicon monolithic integrated circuit
.
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This
product is not designed for protection against radioactive rays
1/13
TSZ02201-0GJG0G300040-1-2
11.Dec.2020 Rev.008

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