SMD Type
PNP Transistors
KTA2014
Transistors
■
Features
●
Excellent hFE Linearity
●
Low Noise
●
Small Package
●
Complementary to KTC4075
1.Base
2.Emitter
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Rating
-50
-50
-5
-150
-30
100
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise Figure
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
NF
C
ob
f
T
Test Conditions
Ic= -100 uA， I
E
=0
Ic= -1 mA，I
B
=0
I
E
= -100 uA， I
C
=0
V
CB
= -50V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CE
= -6V, I
C
= -2mA
V
CE
= -6V, I
C
= -0.1mA,Rg=10KΩ,f=1KHz
V
CB
= -10V,I
E
=0, f=1MHz
V
CE
= -10V, I
C
= -1mA
80
70
Min
-50
-50
-5
-0.1
-0.1
-0.3
-1.2
400
10
7
dB
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
KTA2014-O
70-140
SO
KTA2014-Y
120-240
SY
KTA2014-G
200-400
SG
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