Breakover Diodes
Applications
l
Transient voltage protection
l
High-voltage switches
l
Crowbar
l
Lasers
l
Pulse generators
i
I
H
I
BO
V
V
H
V
BO
Application Note H - 6
Remark:
For special selection of more than 2 pieces IXBOD 1-... for every
break down voltage of V
BO
> 2000 V please contact us.
© 2000 IXYS All rights reserved
H-1
IXBOD 1 -06...10
Single Breakover Diode
V
BO
= 600-1000V
I
AVM
= 0.9 A
V
BO
V
600 ±50
700 ±50
800 ±50
900 ±50
1000 ±50
Standard
Types
IXBOD 1 -06
IXBOD 1 -07
IXBOD 1 -08
IXBOD 1 -09
IXBOD 1 -10
A
K
Symbol
I
D
V
BO
I
RMS
Conditions
T
VJ
= 125°C;
f = 50 HZ;
Ratings
V = 0,8x V
BO
T
amb
= 50°C
20
µA
V
BO
(T
VJ
) = V
BO, 25°C
[1 +
K
T
(T
VJ
- 25°C)]
1.4
A
connection pins soldered to printed circuit
(conductor 0,035x2mm)
I
AVM
I
SM
I²t
T
amb
T
stg
T
VJm
K
T
K
P
R
thJA
Weight
Symbol
I
BO
I
H
V
H
(dv/dt)
C
(di/dt)
C
t
q(typ)
V
T
V
(TO)
r
T
Conditions
T
VJ
=
T
VJ
=
T
VJ
=
T
VJ
=
25°C
25°C
25°C
50°C;
V
D
= 0.67·(V
BO
+ 100V)
V
D
= V
BO
; I
T
= 80A; f = 50 Hz
Temperatur coefficient of V
BO
coefficient for energy per pulse E
P
(material constant)
- natural convection
- with air speed 2 m/s
t
p
= 0.1 ms;
t
p
= 0.1 ms;
T
amb
= 50°C non repetitive
T
amb
= 50°C
0.9
200
2
-40...+125
-40...+125
125
2·10
-3
700
60
45
1
A
A
A
2
s
°C
°C
°C
K
-1
K/Ws
K/W
K/W
g
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
15
30
4-8
>
1000
200
150
1.7
1.1
0.12
mA
mA
V
V/µs
A/µs
µs
V
V
Ω
K
A
T
VJ
= 125°C;
T
VJ
= 125°C
V
D
= 0.67·V
BO
; V
R
= 0V
dV/dt
(lin.)
= 200V/µs; I
T
= 80A; di/dt = -10A/µs
T
VJ
=125°C; I
T
= 5A
For power-loss calculations only
T
VJ
= 125°C
IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747
H-2
© 2000 IXYS All rights reserved
030
IXBOD 1 -06...10
Fig. 1 Energy per pulse for trapezoidal current wafeforms
(see waveform definition).
Fig. 2
Energy per pulse for exponentially decaying
current pulse (see waveforms definition).
V
a
= 0 m/s
V
a
= 2 m/s
[V]
V
T
T
VJ
= 125°C
T
VJ
= 25°C
[K/W]
Z
thJA
i
T
[A]
t [s]
Fig. 3 On-state voltage
© 2000 IXYS All rights reserved
Fig. 4 Transient thermal resistance.
H-3
IXBOD 1 -12R...42R(D)
Breakover Diode Modules
V
BO
V
1200
1300
1400
1500
1600
1700
1800
1900
±50
±50
±50
±50
±50
±50
±50
±50
Standard
Types
IXBOD 1 -12R(D)
IXBOD 1 -13R(D)
IXBOD 1 -14R(D)
IXBOD 1 -15R(D)
IXBOD 1 -16R(D)
IXBOD 1 -17R(D)
IXBOD 1 -18R(D)
IXBOD 1 -19R(D)
BOD -
Elements
2
2
2
2
2
2
2
2
V
BO
V
2000 ±50
2100 ±50
2200 ±50
2300 ±50
2400 ±50
2500 ±50
2600 ±100
2800 ±100
3000 ±100
3200 ±100
Version: R
Standard
Types
IXBOD 1 -20R(D)
IXBOD 1 -21R(D)
IXBOD 1 -22R(D)
IXBOD 1 -23R(D)
IXBOD 1 -24R(D)
IXBOD 1 -25R(D)
IXBOD 1 -26R(D)
IXBOD 1 -28R(D)
IXBOD 1 -30R(D)
IXBOD 1 -32R(D)
BOD -
Elements
3
3
3
3
3
3
3
3
3
3
Version: RD
V
BO
V
3400
3600
3800
4000
4200
±100
±100
±100
±100
±100
Standard
Types
IXBOD 1 -34R
IXBOD 1 -36R
IXBOD 1 -38R
IXBOD 1 -40R
IXBOD 1 -42R
BOD -
Elements
4
4
4
4
4
Symbol
I
D
V
BO
I
RMS
Test Conditions
T
VJ
=
f = 50 HZ;
125°C;V = 0,8x V
BO
T
amb
= 50°C
2 BODs
100
2.0
3 BODs
100
1.4
4 BODs
100
1.1
2-3 BODs
D-Version
100
0.3
µA
A
V
BO
(T
VJ
) = V
BO, 25°C
[1 +
K
T
(T
VJ
- 25°C)]
connection pins soldered to printed circuit
(conductor 0,035x2mm)
I
AVM
I
SM
I²t
V
T
V
(TO)
r
T
t
p
= 0.1 ms;
t
p
= 0.1 ms;
T
amb
= 50°C non repetitive
T
amb
= 50°C
1.25
200
2
3.4
2.2
0.24
0.9
200
2
5.1
3.3
0.36
-40...+125
-40...+125
125
2·10
-3
700
20
16
14
0.7
200
2
6.8
4.4
0.48
-40...+125
-40...+125
125
2·10
-3
700
20
16
14
3 BODs
15
30
4-8
-
-
> 2000
> 2500
-
-
200
150
0.2
50
0.125
27
17.5
3
-40...+125
-40...+125
125
2·10
-3
700
20
16
14
4 BODs
15
30
4-8
-
-
-
-
> 3000
> 3500
200
150
A
A
A
2
s
V
V
Ω
°C
°C
°C
K
-1
K/Ws
K/W
K/W
g
T
VJ
=125°C; I
T
= 5A
For power-loss calculations only
T
VJ
=125°C
T
amb
-40...+125
T
stg
-40...+125
T
VJm
125
K
T
Temperatur coefficient of V
BO
2·10
-3
K
P
coefficient for energy per pulse E
P
(material constant)
700
R
thJA
Weight
Symbol
I
BO
I
H
V
H
(dv/dt)
C
- natural convection
- with air speed 2 m/s
typical
20
16
14
Test Conditions
Characteristic Values both Versions R & RD
2 BODs
T
VJ
=
T
VJ
=
T
VJ
=
25°C
25°C
25°C
15
30
4-8
> 1000
> 1500
-
-
-
-
200
150
mA
mA
V
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
A/µs
µs
032
T
VJ
= 50°C;
V
D
= 0.67·(V
BO
+ 100V)
- V
BO
bis 1500V
- V
BO
1600 - 2000V
- V
BO
2100 - 2500V
- V
BO
2600 - 3000V
- V
BO
3200 - 3400V
- V
BO
3600 - 4200V
T
VJ
= 125°C;
V
D
= V
BO
; I
T
= 80A; f = 50 Hz
T
VJ
= 125°C
V
D
= 0.67·V
BO
; V
R
= 0V
dv/dt
(lin.)
= 200V/µs; I
T
= 80A; di/dt = -10A/µs
(di/dt)
C
t
q(typ)
IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747
H-4
© 2000 IXYS All rights reserved
IXBOD 1 -12R...42R(D)
A
K
K
A
Dimensions in mm (1 mm = 0.0394")
Fig. 5 Energy per pulse for single BOD element
for trapezoidal wave current. E
P
must be multiplied
by number of elements for total energy.
Fig. 6 Energy per pulse for single BOD element
for exponentially decaying current pulse. E
P
must
be multiplied by number of elements for total
energy.
n = number of BOD-Elements in series
[V]
V
T
[K/W]
Z
thJA
V
a
= 0 m/s
V
a
= 2 m/s
i
T
[A]
t [s]
Fig. 7 On-state voltage at T
VJ
= 125°C.
© 2000 IXYS All rights reserved
Fig. 8 Transient thermal resistance.
H-5
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