PD - 96917B
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l
l
l
l
l
l
l
l
IRF6619
Low Profile (<0.7 mm)
V
DSS
V
GS
R
DS(on)
R
DS(on)
Dual Sided Cooling Compatible
20V max ±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V
Ultra Low Package Inductance
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Optimized for High Frequency Switching above 1MHz
Ideal for CPU Core DC-DC Converters
38nC
13nC
3.5nC
18nC
22nC
2.0V
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction Losses
Compatible with existing Surface Mount Techniques
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MX
DirectFET ISOMETRIC
Description
The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high
Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS (Thermally limited)
I
AR
E
AR
6.0
Typical R DS (on) (mΩ)
Max.
20
±20
30
24
150
240
240
See Fig. 14, 15, 17a, 17b,
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
e
h
@ 10V
h
@ 10V
kÃ
(
Package Limited
)
f
12
10
8
6
4
2
0
0
20
ID= 16A
A
Ãe
mJ
A
mJ
Repetitive Avalanche Energy
e
5.0
4.0
3.0
2.0
1.0
2.0
TJ = 25°C
TJ = 125°C
ID = 30A
VDS = 16V
VDS= 10V
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
40
60
80
100
Notes:
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.86mH, R
G
= 25Ω, I
AS
=
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
24A, V
GS
=10V. Part not recommended for use above this value.
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1
9/30/05
IRF6619
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
1.55
–––
–––
–––
–––
–––
89
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
14
1.65
2.2
–––
-5.8
–––
–––
–––
–––
–––
38
10.2
3.5
13.2
11.1
16.7
22
–––
21
71
25
9.3
5040
1580
780
–––
–––
2.2
3.0
2.45
–––
1.0
150
100
-100
–––
57
–––
–––
–––
–––
–––
–––
2.3
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
g
V
GS
= 4.5V, I
D
= 24A
g
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 24A
V
DS
= 10V
V
mΩ
V
mV/°C
µA
nA
S
mV/°C Reference to 25°C, I
D
= 1mA
nC
V
GS
= 4.5V
I
D
= 16A
See Fig. 18
V
DS
= 10V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
g
I
D
= 24A
Clamped Inductive Load
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current @T
C
=25°C
(Body Diode)
Pulsed Source Current
(Body Diode)
e
–––
–––
–––
0.8
29
18
1.0
44
27
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
240
Min.
–––
Typ. Max. Units
–––
110
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 24A, V
GS
= 0V
g
T
J
= 25°C, I
F
= 24A
di/dt = 100A/µs
g
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6619
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
h
Power Dissipation
h
Power Dissipation
k
Power Dissipation
Operating Junction and
Parameter
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
Peak Soldering Temperature
Storage Temperature Range
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
hl
Junction-to-Ambient
il
Junction-to-Ambient
jl
Junction-to-Case
kl
Junction-to-Ambient
Linear Derating Factor
100
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
45
–––
–––
1.4
–––
Units
°C/W
Junction-to-PCB Mounted
hÃ
W/°C
10
Thermal Response ( Z thJA )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
A
τ
τ
2
τ
3
τ
4
τ
4
0.1
Ri (°C/W)
0.6784
17.299
17.566
9.4701
τi
(sec)
0.00086
0.57756
8.94
106
0.01
τ
1
Ci=
τi/Ri
Ci i/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with a
thin gap filler and heat sink.
(still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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IRF6619
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
0.1
0.1
1
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
100.0
1.5
Fig 5.
Typical Output Characteristics
ID = 30A
ID, Drain-to-Source Current
(Α)
Typical R DS(on) (Normalized)
TJ = 150°C
TJ = 25°C
10.0
VGS = 10V
TJ = -40°C
1.0
1.0
VDS = 10V
0.1
1.5
2.0
2.5
3.0
≤
60µs PULSE WIDTH
3.5
4.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
8000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Fig 7.
Normalized On-Resistance vs. Temperature
10
9
8
(mΩ)
TA= 25°C
VGS = 3.0V
6000
Coss = Cds + Cgd
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 5.0V
VGS = 10V
C, Capacitance (pF)
DS(on)
Typical R
10
100
Ciss
4000
7
6
5
4
3
2
1
2000
Coss
Crss
0
1
0
40
80
120
160
200
VDS , Drain-to-Source Voltage (V)
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
4
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IRF6619
1000.0
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
ISD , Reverse Drain Current (A)
100.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
100
10.0
10
1msec
10msec
1.0
VGS = 0V
0.1
0.2
0.6
1.0
1.4
1.8
VSD , Source-to-Drain Voltage (V)
1
TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.10
1.00
10.00
100.00
0.1
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
180
VGS(th) Gate threshold Voltage (V)
2.5
Fig11.
Maximum Safe Operating Area
160
140
ID , Drain Current (A)
LIMITED BY PACKAGE
2.0
120
100
80
60
40
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
ID = 250µA
1.5
1.0
0.5
-75
-50
-25
0
25
50
75
100
125
150
TJ , Junction Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
1000
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
Duty Cycle = Single Pulse
100
Avalanche Current (A)
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
∆Tj
= 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
1
0.05
0.10
0.1
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 14.
Typical Avalanche Current vs.Pulsewidth
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