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SMBJP6KE9.1

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size268KB,4 Pages
ManufacturerETC2
Download Datasheet View All

SMBJP6KE9.1 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJP6KE6.8 thru SMBJP6KE440CA
Transient Voltage Suppressor
Breakdown Voltage 6.8 to 440 Volts
Peak Pulse Power
600 Watts
Features
CASE: SMB (DO214AA)
Breakdown Voltages (V
BR
) from 6.8 to 440V
600W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Fast Response Time
Low incremental surge resistance
Excellent clamping capability
Available in uni-directional and bi-directional
High temperature soldering guaranteed: 265
/10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Application
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
PPM
I
PPM
Conditions
Peak pulse power capability with a 10/1000μs
Peak pulse current with a 10/1000μs
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on IC
S
, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Mechanical Data
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Body marked with part number
Polarity:
Cathode indicated by band. No marking on bi-
directional devices
Weight:
0.093g(Approximately)
25
O
C unless otherwise specified
Value
600
SEE TABLE1
5.0
1.38
100
3.5/5.0
25
90
Unit
W
A
W
W
A
V
℃/W
℃/W
Steady state power dissipation at T
L
=25℃ ,Lead lengths 0.375”(10mm)
Steady state power dissipation at T
A
=25℃ when mounted on FR4 PC
described for thermal resistance
Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴
Maximum instantaneous forward voltage at 30A for unidirectional only
Thermal resistance junction to lead
Thermal resistance junction to ambient
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
T
J,
T
STG
Operating and Storage Temperature
-65 to +150
Notes:
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
V
F
=3.5Vfor P4KE220(A) and below; V
F
=5.0V for P4KE250(A) and above
Document Number: SMBP6KE6.8 thru SMBJP6KE440CA
Feb.29, 2012
1
www.smsemi.com
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