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MSCD36-08

Description
36 A, 800 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size143KB,3 Pages
ManufacturerETC2
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MSCD36-08 Overview

36 A, 800 V, SILICON, RECTIFIER DIODE

MSCD36
Glass Passivated Rectifier
Diode Modules
V
RRM
800 to 1800V
I
FAV
36 Amp
Applications
Non-controllable rectifiers for AC/AC
converters
Line rectifiers for transistorized AC motor
controllers
Field supply for DC motors
Circuit
MSCD
MSAD
MSKD
1
1
1
2
2
2
3
3
3
Features
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
Glass passivated chip
UL E243882 approved
Module Type
TYPE
MSCD36-08
MSCD36-12
MSCD36-16
MSCD36-18
MSAD36-08
MSAD36-12
MSAD36-16
MSAD36-18
MSKD36-08
MSKD36-12
MSKD36-16
MSKD36-18
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
Single phase ,half wave 180°conduction Tc=104℃
I
FAV
Single phase ,half wave 180°conduction Tc=100℃
I
F(RMS)
t=10mS Tvj =45℃
I
FSM
t=10mS Tvj =45℃
i
2
t
a.c.50HZ;r.m.s.;1min
V
isol
T
vj
T
stg
Mt
Ms
To terminals(M5)
To heatsink(M6)
Values
36
52
650
2100
3000
-40 to +150
-40 to +125
3±15%
5±15%
100
Units
A
A
A
A
2
s
V
Nm
Nm
g
Weight
Module (Approximately)
Thermal Characteristics
Symbol
Per diode
R
th(j-c)
Module
R
th(c-s)
Electrical Characteristics
Symbol
V
FM
I
RD
Conditions
Values
1.0
0.1
Units
℃/W
℃/W
Conditions
T=25℃ I
F
=100A
T
vj
=150℃ V
RD
=V
RRM
1
Values
Min.
Typ.
1.18
Max.
1.25
5
Units
V
mA
Document Number: MSCD36
Aug.31, 2010
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