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MSDT200-12

Description
314 A, 1600 V, SCR
Categoryaccessories   
File Size292KB,5 Pages
ManufacturerETC2
Download Datasheet Parametric Compare View All

MSDT200-12 Overview

314 A, 1600 V, SCR

MSDT200-12 Parametric

Parameter NameAttribute value
Number of terminals7
Maximum DC trigger current150 mA
Processing package descriptionM5, 7 PIN
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formUNSPECIFIED
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureSingle WITH BUILT-IN diode
Shell connectionisolation
Number of components1
Effective maximum current314 A
Off-state repetitive peak voltage1600 V
Reverse repetitive peak voltage1600 V
Trigger typesilicon controlled rectifier
MSDT200
Three Phase Bridge
+ Thyristor
V
RRM
/ V
DRM
I
FAV
/ I
TAV
Features
Circuit
G
R2
800 to 1600V
200Amp
Blocking voltage:800 to 1600V
Three Phase Bridge and a Thyristor
Low Forward Voltage
-
Applications
R S T
+
Inverter for AC or DC motor control
Current stablilzed power supply
Switching power supply
UL E243882 approved
Module Type
TYPE
MSDT200-08
MSDT200-12
MSDT200-16
V
RRM
/ V
DRM
800V
1200V
1600V
V
RSM
900V
1300V
1700V
◆Diode
Maximum Ratings
Symbol
I
D
I
FSM
i
2
t
Visol
Tvj
Tstg
Mt
Mt
Ms
Weight
Item
Conditions
Tc=96℃ Three phase full wave
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
200
1900
18050
3000
-40 to +150
-40 to +125
2±15%
5±15%
5±15%
320
Units
A
A
A
2
s
V
Nm
Nm
Nm
g
Output Current(D.C.)
Surge forward current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
To terminals(M4)
To terminals(M6)
To heatsink(M6)
Module(Approximately)
Thermal Characteristics
Symbol
Item
R
th(j-c)
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case(TOTAL)
Case to Heat sink
Values
0.12
0.06
Units
℃/W
℃/W
Electrical Characteristics
Symbol
Item
V
FM
Forward Voltage Drop, max.
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ I
F
=200A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
Values
1.35
≤2
≤10
Units
V
mA
mA
I
RRM
Document Number: MSDT200
Jan.15,2015
www.smsemi.com
1

MSDT200-12 Related Products

MSDT200-12 MSDT200-08 MSDT200 MSDT200-16
Description 314 A, 1600 V, SCR 314 A, 1600 V, SCR 314 A, 1600 V, SCR 314 A, 1600 V, SCR
Number of terminals 7 7 7 7
Maximum DC trigger current 150 mA 150 mA 150 mA 150 mA
Processing package description M5, 7 PIN M5, 7 PIN M5, 7 PIN M5, 7 PIN
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle Rectangle
Package Size Flange mounting Flange mounting Flange mounting Flange mounting
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER
Packaging Materials UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Shell connection isolation isolation isolation isolation
Number of components 1 1 1 1
Effective maximum current 314 A 314 A 314 A 314 A
Off-state repetitive peak voltage 1600 V 1600 V 1600 V 1600 V
Reverse repetitive peak voltage 1600 V 1600 V 1600 V 1600 V
Trigger type silicon controlled rectifier silicon controlled rectifier silicon controlled rectifier silicon controlled rectifier
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