MSDT200
Three Phase Bridge
+ Thyristor
V
RRM
/ V
DRM
I
FAV
/ I
TAV
Features
Circuit
G
R2
800 to 1600V
200Amp
Blocking voltage:800 to 1600V
Three Phase Bridge and a Thyristor
Low Forward Voltage
-
Applications
R S T
+
Inverter for AC or DC motor control
Current stablilzed power supply
Switching power supply
UL E243882 approved
Module Type
TYPE
MSDT200-08
MSDT200-12
MSDT200-16
V
RRM
/ V
DRM
800V
1200V
1600V
V
RSM
900V
1300V
1700V
◆Diode
Maximum Ratings
Symbol
I
D
I
FSM
i
2
t
Visol
Tvj
Tstg
Mt
Mt
Ms
Weight
Item
Conditions
Tc=96℃ Three phase full wave
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
200
1900
18050
3000
-40 to +150
-40 to +125
2±15%
5±15%
5±15%
320
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
Nm
g
Output Current(D.C.)
Surge forward current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
To terminals(M4)
To terminals(M6)
To heatsink(M6)
Module（Approximately）
Thermal Characteristics
Symbol
Item
R
th(j-c)
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case(TOTAL)
Case to Heat sink
Values
0.12
0.06
Units
℃/W
℃/W
Electrical Characteristics
Symbol
Item
V
FM
Forward Voltage Drop, max.
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ I
F
=200A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
Values
1.35
≤2
≤10
Units
V
mA
mA
I
RRM
Document Number: MSDT200
Jan.15,2015
www.smsemi.com
1
MSDT200
◆Thyristor
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Mt
Ms
di/dt
dv/dt
Critical Rate of Rise of On-State
Current
Critical Rate of Rise of Off-State
Voltage, min.
Item
Average On-State Current
Surge On-State Current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Conditions
Tc=93℃, Single Phase half wave
180
o
conduction
TVJ=45
℃
t=10ms (50Hz), sine
VR=0
a.c.50HZ;r.m.s.;1 min
Values
200
1900
18050
3000
-40 to +125
-40 to +125
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
A/μs
V/μs
To terminals(M4)
To terminals(M6)
To heatsink(M6)
T
VJ
=T
VJM
, V
D
=1/2V
DRM
,I
G
=100mA
d
iG
/d
t
=0.1A/μs
T
J
=T
VJM
,V
D
=2/3V
DRM
,linear voltage
rise
2±15%
5±15%
5±15%
200
500
Electrical and Thermal Characteristics
Symbol
V
TM
I
RRM
/I
DRM
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
Rth(j-c)
Rth(c-s)
Item
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
Threshold voltage
Slope resistance
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Max. required DC gate voltage
not to trigger
Max. required DC gate current
not to trigger
Maximum latching current
Maximum holding current
Gate controlled delay time
Circuit commutated turn-off time
Thermal Impedance, max.
Thermal Impedance, max.
Conditions
T=25℃ I
T
=600A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
Values
Min.
Typ. Max.
1.80
100
0.85
1.5
3
150
0.25
10
300
150
1
100
1000
400
Units
V
mA
V
mΩ
V
mA
V
mA
mA
mA
us
us
℃/W
℃/W
T
VJ
=T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
=33Ω
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃,I
G
=1A,di
G
/dt=1A/us
T
VJ
= T
VJM
Junction to Case
Case to Heatsink
0.14
0.06
Document Number: MSDT200
Jan.15,2015
www.smsemi.com
2
MSDT200
Performance Curves
550
500
W
400
150
Three phase
250
A
200
Three phase
300
200
100
100
P
vtot
0
0 I
D
40
80
120
160
A
200
50
I
D
0
0 Tc
50
100
℃
150
Fig1. Power dissipation
0.20
℃/
W
2500
A
2000
Fig2. Forward Current Derating Curve
50HZ
Z
th(j-
C
)
0.10
1500
Per one element
1000
500
Single phase half wave
Tj=25
℃
start
0.001 t 0.01
0.1
1.0
10
S 100
0
1
10
cycles
100
0
Fig3. Transient thermal impedance
1000
max
.
A
250
W
200
Fig4. Max Non-Repetitive Forward Surge
Current
150
100
100
50
I
F
10
0.5 V
F
1.0
1.5
2.0
V
2.5
Tj=25
℃
P
TAV
0
0 I
D
40
80
120
160
A
200
Fig5. Forward Characteristics
Document Number: MSDT200
Jan.15,2015
3
Fig6. SCR Power dissipation
www.smsemi.com
MSDT200
250
A
200
Z
th(j-
C
)
150
0.10
100
0.20
℃/
W
50
I
TAVM
0
0 Tc
50
100
℃
150
0
0.001 t 0.01
0.1
1.0
10
S 100
Fig7. SCR Forward Current Derating Curve
1000
A
10
2
V
Fig8. SCR Transient thermal impedance
max. .
max
Peak Forward Gate Voltage (10V)
Av
e
ra
ge
G
G
at
e
100
10
0
-10℃
135℃
at
e
Po
Po
we
r
w
er
(3
W
)
(1
0W
)
I
T
10
0.5 V
TM
1.0
1.5
2.0
Tj=25℃
V
G
2.5
0.1
10
1
I
G
25℃
Maximum Gate Non-Trigger Voltage
V
10
2
10
3
mA 10
4
Fig9. SCR Forward Characteristics
Fig10. Gate trigger Characteristics
Document Number: MSDT200
Jan.15,2015
www.smsemi.com
4
Peak Gate Current (3A)
10
1
Pe
ak
MSDT200
Package Outline Information
CASE: M5
Dimensions in mm
Document Number: MSDT200
Jan.15,2015
www.smsemi.com
5
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