GBJ1006 datasheet, PDF - EEWORLD Datasheet

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GBJ1006: Description3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size63KB，2 Pages; ManufacturerGoodwork Semiconductor ( GW ); Websitehttp://www.goodwork.com.tw/

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GBJ1006 Overview

3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ1006 Parametric

Parameter Name	Attribute value
Maker	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknow
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
Maximum non-repetitive peak forward current	170 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	3 A
Maximum repetitive peak reverse voltage	800 V
surface mount	NO

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GBJ1001

THRU

GBJ1007

SINGLE PHASE 10.0 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

10.0 Amperes

GBJ

1.193(30.3)

1.169(29.7)

.134(3.4)

.122(3.1)

.189(4.8)

.173(4.4)

.150(3.8)

.134(3.4)

.441(11.2)

.425(10.8)

FEATURES

* Ideal for printed circuit board

* Low forward voltage

* Low leakage current

* Mounting position: Any

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

.165(4.2)

.142(3.6)

.708(18.0)

.669(17.0)

.800(20.3)

.776(19.7)

.189

(4.8)

.402(10.2) .303(7.7) .303(7.7)

SPACING

.386(9.8) .287(7.3) .287(7.3)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

.114(2.9)

.098(2.5)

.031(0.8)

.023(0.6)

Dimensions in inches and (millimeters)

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward (with heatsink Note 2)

Rectified Current at Tc=100 C (Without heatsink)

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Bridge Element at 5.0A D.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance R

(Note 2)

Operating Temperature Range, T

Storage Temperature Range, T

STG

NOTES:

GBJ1001 GBJ1002 GBJ1003 GBJ1004 GBJ1005 GBJ1006 GBJ1007

UNITS

C/W

100

200

140

200

400

280

400

10.0

3.0

220

1.1

5.0

500

2.3

-55 +150

600

420

600

800

560

800

1000

700

1000

Ta=100 C

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal Resistance from Junction to Case with device mounted on 150mm x 150mm x 1.6mm Cu Plate Heatsink.

304

GBJ1006 Related Products

	GBJ1006	GBJ1003	GBJ1004	GBJ1001	GBJ1002	GBJ1005	GBJ1007
Description	3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code	unknow	unknown	unknow	unknow	unknow	-	-
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	-
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	-
Maximum forward voltage (VF)	1.05 V	1.05 V	1.05 V	1.05 V	1.05 V	-	-
Maximum non-repetitive peak forward current	170 A	170 A	170 A	170 A	170 A	-	-
Number of components	4	4	4	4	4	-	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	-	-
Maximum output current	3 A	3 A	3 A	3 A	3 A	-	-
Maximum repetitive peak reverse voltage	800 V	200 V	400 V	50 V	100 V	-	-
surface mount	NO	NO	NO	NO	NO	-	-

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