GBJ1007 datasheet, PDF - EEWORLD Datasheet

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GBJ1007: Description10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size63KB，2 Pages; ManufacturerGoodwork Semiconductor ( GW ); Websitehttp://www.goodwork.com.tw/

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GBJ1007 Overview

10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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GBJ1001

THRU

GBJ1007

SINGLE PHASE 10.0 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

10.0 Amperes

GBJ

1.193(30.3)

1.169(29.7)

.134(3.4)

.122(3.1)

.189(4.8)

.173(4.4)

.150(3.8)

.134(3.4)

.441(11.2)

.425(10.8)

FEATURES

* Ideal for printed circuit board

* Low forward voltage

* Low leakage current

* Mounting position: Any

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

~

.165(4.2)

.142(3.6)

.708(18.0)

.669(17.0)

.800(20.3)

.776(19.7)

.189

(4.8)

.402(10.2) .303(7.7) .303(7.7)

SPACING

.386(9.8) .287(7.3) .287(7.3)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

+

.114(2.9)

.098(2.5)

.031(0.8)

.023(0.6)

Dimensions in inches and (millimeters)

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward (with heatsink Note 2)

Rectified Current at Tc=100 C (Without heatsink)

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Bridge Element at 5.0A D.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance R

JC

(Note 2)

Operating Temperature Range, T

J

Storage Temperature Range, T

STG

NOTES:

GBJ1001 GBJ1002 GBJ1003 GBJ1004 GBJ1005 GBJ1006 GBJ1007

UNITS

V

A

V

A

PF

C/W

C

50

35

50

100

70

100

200

140

200

400

280

400

10.0

3.0

220

1.1

5.0

500

55

2.3

-55 +150

600

420

600

800

560

800

1000

700

1000

Ta=100 C

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal Resistance from Junction to Case with device mounted on 150mm x 150mm x 1.6mm Cu Plate Heatsink.

304

GBJ1007 Related Products

	GBJ1007	GBJ1003	GBJ1004	GBJ1001	GBJ1002	GBJ1005	GBJ1006
Description	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code	-	unknown	unknow	unknow	unknow	-	unknow
Configuration	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS
Diode type	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	-	1.05 V	1.05 V	1.05 V	1.05 V	-	1.05 V
Maximum non-repetitive peak forward current	-	170 A	170 A	170 A	170 A	-	170 A
Number of components	-	4	4	4	4	-	4
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	-	150 °C
Maximum output current	-	3 A	3 A	3 A	3 A	-	3 A
Maximum repetitive peak reverse voltage	-	200 V	400 V	50 V	100 V	-	800 V
surface mount	-	NO	NO	NO	NO	-	NO

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