HER106 datasheet, PDF - EEWORLD Datasheet

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HER106: Description1 A, 600 V, SILICON, SIGNAL DIODE, DO-41; CategoryDiscrete semiconductor diode; File Size65KB，2 Pages; ManufacturerGoodwork Semiconductor ( GW ); Websitehttp://www.goodwork.com.tw/

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HER106 Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

HER106 Parametric

Parameter Name	Attribute value
Maker	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknow
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
Maximum non-repetitive peak forward current	30 A
Number of components	1
Maximum operating temperature	125 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	600 V
Maximum reverse recovery time	0.075 µs
surface mount	NO

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HER101

THRU

HER108

1.0 AMP HIGH EFFICIENCY RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

* High speed switching

1.0 Ampere

DO-41

.107(2.7)

.080(2.0)

DIA.

1.0(25.4)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

.034(.9)

.028(.7)

DIA.

.205(5.2)

.166(4.2)

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=55 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Operating Temperature Range T

Storage Temperature Range T

STG

NOTES:

HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108

UNITS

100

200

140

200

300

210

300

1.0

1.3

5.0

100

400

280

400

600

420

600

800

560

800

1000

700

1000

1.0

1.85

-65

+150

1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

132

HER106 Related Products

	HER106	HER102	HER101	HER103	HER104	HER105	HER107	HER108
Description	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE	1 A, 300 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE, DO-41	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Maker	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V	1 V	1 V	1 V	1 V	1.3 V	1.7 V	1.7 V
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A	30 A	30 A	30 A
Number of components	1	1	1	1	1	1	1	1
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	600 V	100 V	50 V	200 V	300 V	400 V	800 V	1000 V
Maximum reverse recovery time	0.075 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.075 µs	0.075 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Is Samacsys	-	N	N	N	N	-	N	-
Base Number Matches	-	1	1	1	1	-	1	-

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