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T60N14VOC

Description
Silicon Controlled Rectifier, 60000mA I(T), 1400V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size808KB,10 Pages
ManufacturerEUPEC [eupec GmbH]
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T60N14VOC Overview

Silicon Controlled Rectifier, 60000mA I(T), 1400V V(DRM),

T60N14VOC Parametric

Parameter NameAttribute value
Objectid101749679
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time180 µs
Critical rise rate of minimum off-state voltage400 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage1.4 V
Maximum holding current200 mA
Maximum leakage current25 mA
On-state non-repetitive peak current1400 A
Maximum on-state voltage1.8 V
Maximum on-state current60000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1400 V
surface mountNO
Trigger device typeSCR

T60N14VOC Related Products

T60N14VOC T60N16BOF T60N18BOF
Description Silicon Controlled Rectifier, 60000mA I(T), 1400V V(DRM), Silicon Controlled Rectifier, 60000mA I(T), 1600V V(DRM), Silicon Controlled Rectifier, 60000mA I(T), 1800V V(DRM),
Objectid 101749679 101749688 101749698
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Nominal circuit commutation break time 180 µs 180 µs 180 µs
Critical rise rate of minimum off-state voltage 400 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 150 mA 150 mA 150 mA
Maximum DC gate trigger voltage 1.4 V 1.4 V 1.4 V
Maximum holding current 200 mA 200 mA 200 mA
Maximum leakage current 25 mA 25 mA 25 mA
On-state non-repetitive peak current 1400 A 1400 A 1400 A
Maximum on-state voltage 1.8 V 1.8 V 1.8 V
Maximum on-state current 60000 A 60000 A 60000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Off-state repetitive peak voltage 1400 V 1600 V 1800 V
surface mount NO NO NO
Trigger device type SCR SCR SCR
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