|
T60N16BOF |
T60N14VOC |
T60N18BOF |
| Description |
Silicon Controlled Rectifier, 60000mA I(T), 1600V V(DRM), |
Silicon Controlled Rectifier, 60000mA I(T), 1400V V(DRM), |
Silicon Controlled Rectifier, 60000mA I(T), 1800V V(DRM), |
| Objectid |
101749688 |
101749679 |
101749698 |
| Reach Compliance Code |
unknown |
unknown |
unknown |
| ECCN code |
EAR99 |
EAR99 |
EAR99 |
| Nominal circuit commutation break time |
180 µs |
180 µs |
180 µs |
| Critical rise rate of minimum off-state voltage |
1000 V/us |
400 V/us |
1000 V/us |
| Maximum DC gate trigger current |
150 mA |
150 mA |
150 mA |
| Maximum DC gate trigger voltage |
1.4 V |
1.4 V |
1.4 V |
| Maximum holding current |
200 mA |
200 mA |
200 mA |
| Maximum leakage current |
25 mA |
25 mA |
25 mA |
| On-state non-repetitive peak current |
1400 A |
1400 A |
1400 A |
| Maximum on-state voltage |
1.8 V |
1.8 V |
1.8 V |
| Maximum on-state current |
60000 A |
60000 A |
60000 A |
| Maximum operating temperature |
125 °C |
125 °C |
125 °C |
| Minimum operating temperature |
-40 °C |
-40 °C |
-40 °C |
| Off-state repetitive peak voltage |
1600 V |
1400 V |
1800 V |
| surface mount |
NO |
NO |
NO |
| Trigger device type |
SCR |
SCR |
SCR |