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T72F04BSM

Description
Silicon Controlled Rectifier, 200A I(T)RMS, 72000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size578KB,5 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

T72F04BSM Overview

Silicon Controlled Rectifier, 200A I(T)RMS, 72000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element,

T72F04BSM Parametric

Parameter NameAttribute value
Objectid1510906781
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time18 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage2 V
Maximum holding current250 mA
JESD-30 codeO-MUPM-H3
Maximum leakage current30 mA
On-state non-repetitive peak current2400 A
Number of components1
Number of terminals3
Maximum on-state current72000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum rms on-state current200 A
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Trigger device typeSCR
T 72 F
Elektrische Eigenschaften
Hiirhstn~lissinn
.~~..l’-~.~~~.J”
Electrical properties
Mzwimlnm
l..-l..ll.l..* .._..__ .
-
Wmttp
.._.._
ratd wal11~9
...““_
Periodische Vorwärts- und
Rückwärts-Spitzensperrspannung
Vorwärts-Stoßspitzen-
Sperrspannung
Rückwärts-Stoßspitzen-
Sperrspannung
Durchlaßstrom-Grenzeffektivwert
Dauergrenzstrom
Stoßstrom-Grenzwert
Grenzlastintegral
Kritische Stromsteilheit
Kritische Spannungssteilheit
repetitive peak forward off-state
and reverse voltages
non repetitive peak
forward off-state voltage
non repetitive peak
reverse voltage
RMS on-state current
average on-state current
surge current
1%value
critical rate of rise of on-state current
critical rate of rise of off-state voltage
t,
t,
=-4o”C...t”,,,,
VDRMI
VRRM
200,400 v
600,800 V
=-40”C...t,,,,
bSM =
VD,,
t, = +
25”c...r,,,
V
RSM
= %tRM
+50
v
A
A
A
A
A
A%
A%
A@
vt!Js
VI!&.
Vl!_ls
VIFS
tc =
65°C
tc =
44°C
t, =
25°C t, = 10 ms
t, = f, mm, t, =
10 Ins
t, = P5”C, t, =
10 ms
-1oms
t, = t”j max,
t
p -
v. 5 67% vDRM,
t =
50 Hz
iGM = 0,6 A, di,$dt = 0,6 A/I.IS
t, = tvi max, vg = 67% v,,,
200
72
ITAVM
127
2400
ITSM
2050
13
28800
21000
(di/dt),,
200
‘)
*)
(dv/dt),, B:
50 50
c*:
500 500
L:
500 50
M*: 1000 500
ITRMSM
Charakteristische Werte
Durchlaßspannung
Schleusenspannung
Ersatzwiderstand
Zündstrom
Zündspannung
Nicht zündender Steuerstrom
Nicht zündende Steuerspannung
Haltestrom
Einraststrom
Vorwärts- u. Rückwärts-Sperrstrom
Zündverzug
Freiwerdezeit
Characteristic values
on-state voltage
threshold voltage
slope resistance
gate trigger current
gate trigger voltage
gate non-trigger current
gate non-trigger voltage
holding current
latching current
t, = t, ,,,=, iT = 400 A
t, = tvi max
t, = t, max
t, = 25”C, vD = 6 V
t, = 25”C, vD = 6 V
t, = tvi maxl v~=6V
t, = t, max< VD = o-5 vonl”I
tv,=25”C,vD=6V,RA=5Q
VT
vT(TO)
rT
max.
lGT
vGT
IGD
VGD
IH
IL
t, = 25”C, “0 = 6 V, RQK 2 10 R
iGM = 0,6A, d@dt = 0,6A/ps, t, = 20 w
forward off-state and reverse Currents t, = tvlmax, Y~ = vDRM, vR = vRRM
gate controlled delay time
t, = 25”C, iGM = 0,6 A, dia/dt = 0,6 A/ps
circuit commutated turn-off time
siehe
Techn. Erl./see Techn. Int.
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
2,2
1,25
1,8
150
2
10
0,25
250
750
30
1,4
10
15
18
20
V
V
m&2
mA
v
mA
V
mA
mA
mA
ps
ps
ps
ps
ps
iD, iR
t9d
t,
B*:
D:
s:
E:
‘hermische Eigenschaften
Innerer Wärmewiderstand
Thermal properties
thermal resistance, junction to case
f3 = lEO”el, sin
DC
-
R
thJC
t, max
t
COP
max.
max.
0,35”CrW
0,33”ClW
125°C
-4O...+ 125°C
-4o... + 150°C
Höchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
Mechanische Eigenschaften
Si-Element mit Druckkontakt
Anzugsdrehmoment
Gewicht
Kriechstrecke
Feuchteklasse
Schwingfestigkeit
Maßbild B
max. junction temperature
Operating temperature
storage temperature
Mechanical properties
Si-pellet with pressure contact
tightening torque
weight
Creepage distance
humidity classification
Vibration resistance
outline B
t st53
M
G
DIN 40040
t=50Hz
DIN 41692.20483
tYP.
20 Nm
150 g
8mm
C
50 m/s2
Seitelpage 154
* Für größere Stückzahlen bitte Liefertermin erfragen/Delivery for larger quantities on request
1) Werte nach DIN IEC 747-6 (ohne vorausgehende Kommutierung)/Values to DIN IEC 747-6 (without prior commutation)
2) Unmittelbar nach der Freiwerdezeit, vgl. Meßbedingungen für t,/lmmediately after circuit commutated turn-off time, see Parameters t,
42

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Index Files: 1053  1803  1517  28  1769  22  37  31  1  36 
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